BLV5N60
N-channel Enhancement Mode Power MOSFET
•
•
•
Avalanche Energy Specified
Fast Switching
Simple Drive Requirements
BV
DSS
R
DS(ON)
I
D
600V
2.5Ω
Ω
4.5A
Description
This advanced high voltage MOSFET is produced
using Belling’s proprietary DMOS technology.
Designed for high efficiency switch mode power supply
.
Absolute Maximum Ratings
(
T
C
=25
o
C unless otherwise noted )
Symbol
V
DS
V
GS
I
D
I
DM
P
D
E
AS
I
AR
E
AR
Tj
T
SDG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current (
T
C
=100
o
C
)
Drain Current (pulsed) (Note 1)
Power Dissipation
Linear Derating Factor
Single Pulsed Avalanche Energy (Note2)
Avalanche Current
Repetitive Avalanche Energy
Operating Junction Temperature Range
Storage Temperature Range
Value
600
+ 20
4.5
2.6
18
104
0.83
218
4.5
10.4
-55 to +150
-55 to +150
Units
V
V
A
A
A
W
W/℃
mJ
A
mJ
o
o
C
C
Thermal Characteristics
Symbol
R
th j-c
R
th j-a
Parameter
Thermal Resistance, Junction to case
Thermal Resistance, Junction to Ambient
Max.
Max.
Value
1.2
62.5
Units
℃/
W
℃/
W
-1-
Total 6 Pages
BLV5N60
N-channel Enhancement Mode Power MOSFET
Electrical Characteristics
(
T
C
=25C unless otherwise noted )
Symbol
BV
DSS
∆BV
DSS
/∆T
J
R
DS(ON)
V
GS(th)
g
fs
I
DSS
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage
Temperature Coefficient
Static Drain-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance(note3)
Drain-Source Leakage Current
Drain-Source Leakage Current
Tc=125℃
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25℃,
I
D
=250uA
V
GS
=10V, I
D
=2.25A
V
DS
=V
GS
, I
D
=250uA
V
DS
=15V, I
D
=2.25A
V
DS
=600V, V
GS
=0V
V
DS
=480V, V
GS
=0V
V
GS
= ± 20V
V
DD
=480V
I
D
=4.5A
V
GS
=10V
note3
V
DD
=300V
I
D
=4.5A
R
G
=25Ω
note3
V
DS
=25V
V
GS
=0V
f = 1MHz
Min.
600
-
-
2
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.6
-
-
4.7
-
-
-
23.7
5.4
9.4
13
21
35
25
690
125
14
Max.
-
-
2.5
4
-
1
100
±100
-
-
-
-
-
-
-
-
-
-
Units
V
V/℃
Ω
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
I
GSS
Qg
Qgs
Qgd
t
(on)
t
r
t
(off)
t
f
Ciss
Coss
Crss
Source-Drain Diode Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
r r
Note：
(1) Repetitive Rating: Pulse width limited by maximum junction temperature
Parameter
Test Conditions
Min.
-
-
-
-
-
Typ.
-
-
-
680
2
Max.
4.5
18
1.4
-
-
Units
A
A
V
ns
uC
Continuous Source Diode Forward Current
Pulsed Source Diode Forward Current (note1)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V, I
S
=4.5A
V
GS
=0V, I
S
=4.5A
dI
F
/dt = 100A/us
(2)
L=18.9mH, Ias=4.5A，Vdd=50V，Rg=25Ω，staring Tj=25C
(3) Pulse width
≤
300 us; duty cycle
≤
2%
-2-
Total 6 Pages
BLV5N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Normalized BVdss vs. Junction
Temperature
Fig 4. Normalized On-Resistance vs.
Junction Temperature
-3-
Total 6 Pages
BLV5N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
（
continued）
）
Fig 5. On-Resistance Variation vs.
Drain Current and Gate Voltage
Fig 6. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Fig 7. Gate Charge Characteristics
Fig 8. Capacitance Characteristics
-4-
Total 6 Pages
BLV5N60
N-channel Enhancement Mode Power MOSFET
Typical Characteristics
（
continued）
）
Fig 9. Maximum Safe Operating Area
Fig 10. Transient Thermal Response Curve
-5-
Total 6 Pages
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