Transys
Electronics
L I M I T E D
TO-251 Plastic-Encapsulated Transistors
6. 5 0¡ À. 10
0
2 . 30¡ À. 05
0
0. 5 1¡ À. 03
0
B772
FEATURES
TRANSISTOR (PNP)
14. 70
5¡ ã
5¡ ã
0. 80¡ À. 0 5
0
0. 6 0¡ À. 0 5
0
1.
Power dissipation
P
CM:
1.25
W(Tamb=25℃)
2.
3.
BASE
2. 3 0¡ À. 05
0
2. 3 0¡ À. 0 5
0
1 . 20
0. 51 ¡ À. 03
0
123
COLLECTOR
0
0. 75¡ À. 10
6. 50¡ À. 15
0
5. 30¡ À. 10
0
0. 51¡ À. 05
0
2. 30¡ À. 10
0
7. 70
0
5. 50¡ À. 10
TO-251
TO-252-2
5. 3 0¡ À. 05
0
5¡ ã
Collector current
I
CM:
-3
A
Collector-base voltage
V
(BR)CBO
:
- 40
V
Operating and storage junction temperature range
T
J
, T
stg
: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V(BR)
CBO
V(BR)
CEO
V(BR)
EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE (sat)
V
BE(sat)
f
T
0
9. 70¡ À. 20
0. 51¡ À. 10
0
0¡ 0 . 10
«
5¡ ã
5¡ ã
0
1. 60¡ À. 15
2. 30¡ À. 10
0
0. 60¡ À. 10
0
2. 30¡ À. 10
0
0. 51
123
unless otherwise specified)
Test
conditions
MIN
-40
-30
-6
-1
-10
-1
60
32
-0.5
-1.5
50
V
V
MHz
400
TYP
MAX
UNIT
V
V
V
µA
µA
µA
Ic= -100
µ
A, I
E
=0
Ic= -10mA, I
B
=0
I
E
= -100
µ
A, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -30V, I
B
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, IC= -1A
V
CE
= -2V, I
C
= -100mA
I
C
= -2A, I
B
= -0.2 A
I
C
= -2A, I
B
= -0.2 A
V
CE
= -5V, Ic=-0.1A
f =10MHz
CLASSIFICATION OF hFE
(1)
Rank
Range
R
60-120
O
100-200
Y
160-320
GR
200-400
0
2. 70¡ À. 20
0¡ ¡ ã« ¡ ã
9
0. 6
0. 80¡ À. 10
0
0
5. 50¡ À. 10
EMITTER
5¡ ã
1. 20
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