BSC042N03SGAUMA1 datasheet, PDF

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BSC042N03SGAUMA1: DescriptionPower Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8; CategoryDiscrete semiconductor The transistor; File Size635KB，10 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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BSC042N03SGAUMA1 Overview

Power Field-Effect Transistor, 20A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8

BSC042N03SGAUMA1 Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F5
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)	280 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	20 A
Maximum drain-source on-resistance	0.0065 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDSO-F5
Number of components	1
Number of terminals	5
Operating mode	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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