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BCP54/T3

Description
TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size1MB,22 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

BCP54/T3 Overview

TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power

BCP54/T3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSC-73
package instructionSMALL OUTLINE, R-PDSO-G4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)130 MHz
Base Number Matches1
BCP54; BCX54; BC54PA
45 V, 1 A NPN medium power transistors
Rev. 8 — 21 October 2011
Product data sheet
1. Product profile
1.1 General description
NPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BCP54
BCX54
BC54PA
[1]
Type number
[1]
PNP complement
JEITA
SC-73
SC-62
-
JEDEC
-
TO-243
-
BCP51
BCX51
BC51PA
SOT223
SOT89
SOT1061
Valid for all available selection groups.
1.2 Features and benefits
High current
Three current gain selections
High power dissipation capability
Exposed heatsink for excellent thermal and electrical conductivity (SOT89, SOT1061)
Leadless very small SMD plastic package with medium power capability (SOT1061)
AEC-Q101 qualified
1.3 Applications
Linear voltage regulators
Low-side switches
Battery-driven devices
Power management
MOSFET drivers
Amplifiers
1.4 Quick reference data
Table 2.
Symbol
V
CEO
I
C
I
CM
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
peak collector current
DC current gain
h
FE
selection -10
h
FE
selection -16
[1]
Pulse test: t
p
300
s; 
= 0.02.
Conditions
open base
single pulse; t
p
1 ms
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
V
CE
= 2 V; I
C
= 150 mA
[1]
[1]
[1]
Min
-
-
-
63
63
100
Typ
-
-
-
-
-
-
Max
45
1
2
250
160
250
Unit
V
A
A

BCP54/T3 Related Products

BCP54/T3 BCX54-10,135 BCP54-T BCX54-T
Description TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, PLASTIC, SC-73, 4 PIN, BIP General Purpose Power 1000mA, 45V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA TRANSISTOR 1 A, 45 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power TRANSISTOR 1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-243AA, PLASTIC, SC-62, 3 PIN, BIP General Purpose Small Signal
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PSSO-F3 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PSSO-F3
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 45 V 45 V 45 V 45 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 63 40 25
JESD-30 code R-PDSO-G4 R-PSSO-F3 R-PDSO-G4 R-PSSO-F3
Number of components 1 1 1 1
Number of terminals 4 3 4 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
surface mount YES YES YES YES
Terminal form GULL WING FLAT GULL WING FLAT
Terminal location DUAL SINGLE DUAL SINGLE
transistor applications SWITCHING SWITCHING SWITCHING AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 130 MHz 180 MHz 130 MHz 130 MHz
Maximum operating temperature 150 °C - 150 °C 150 °C
Certification status Not Qualified - Not Qualified Not Qualified
Maker - NXP NXP NXP
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