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317B

Description
10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE
Categorysemiconductor    Discrete semiconductor   
File Size43KB,2 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
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317B Overview

10.25 pF, 35 V, SILICON, VARIABLE CAPACITANCE DIODE

LESHAN RADIO COMPANY, LTD.
Variable Capacitance Diode
for Tuner
HVC317B
FEATURES
• High capacitance ratio. (n =13.0 min)
• Ultra small Flat Package (UFP) is suitable for surface mount
design.
2
1
SOD– 523
1
CATHODE
2
ANODE
DEVICE MARKING
HVC317B = A5
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C)
Item
Reversevoltage
Junction temperature
Storage temperature
Notes 1.R
L
=10kΩ
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
Item
Reverse current
Capacitance
Capacitance ratio
Series resistance
Matching error
Symbol
I
R1
I
R2
C
1
C
25
n
r
s
∆C/C
*
1
Min
9.00
0.60
13.0
Typ
Max
10
100
11.5
0.80
1.6
6.0
Unit
nA
pF
%
Test Condition
V
R
= 30V
V
R
= 30V, T
A
= 60°C
V
R
= 1V, f = 1 MHz
V
R
= 25V, f = 1 MHz
C
1
/ C
25
V
R
=5V, f = 470 MHz
V
R
= 1 to 25V , f = 1 MHz
Symbol
V
R
T
j
T
stg
Value
35
125
– 55 to +125
Unit
V
°C
°C
Notes 1. C.C system (Continuous Connected taping system) enable to make any 10 pcs of
∆C/C
continuous in a reel , expect extention to another group.
Calculate Matching Error,
C/C=
(C
max
-C
min
)
C
min
x 100 (%)
HVC317B–1/2
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