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31DF2

Description
3 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size34KB,2 Pages
ManufacturerETC
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31DF2 Overview

3 A, SILICON, RECTIFIER DIODE

31DF2.....31DF4
3 Amp. Glass Passivated Ultrafast Recovery Rectifier
Dimensions in mm.
DO-201AD
(Plastic)
Voltage
200 to 400 V
Current
3 A at 40 ºC.
®
9.1
± 0.3
62.5
± 0.5
Mounting instructions
1. Min. distance from body to soldering point,
4 mm.
2. Max. solder temperature, 350 °C.
3. Max. soldering time, 3.5 sec.
4. Do not bend lead at a point closer than
3 mm. to the body.
Glass Passivated Junction
High current capability
The plastic material carries
U/L recognition 94 V-0
Terminals: Axial Leads
Polarity: Color band denotes cathode
Maximum Ratings, according to IEC publication No. 134
31DF2
V
RRM
I
F(AV)
I
FRM
I
FSM
t
rr
T
j
T
stg
Peak Recurrent reverse voltage
Forward current at Tamb = 40 °C
Recurrent peak forward current
8.3 ms. peak forward surge current
(Jedec Method)
31DF4
400 V
3A
15 A
90 A
30 ns
– 65 to + 150 °C
– 65 to + 150 °C
200 V
Reverse recovery time from
I
F
= 0.5 A ; I
R
= 1 A ; I
RR
= 0.25 A
Operating temperature range
Storage temperature range
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
thj-a
Max. forward voltage drop at I
F
= 3 A
Max. reverse current at V
RRM
at 25 ºC
0.98 V
10 µA
30 °C/W
1.25 V
Max. thermal resistance ( l = 10 mm.)
Jul - 03

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31DF2 31DF4
Description 3 A, SILICON, RECTIFIER DIODE 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
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