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BZT55A3V6GS18

Description
Zener Diode, 3.6V V(Z), 1%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2
CategoryDiscrete semiconductor    diode   
File Size153KB,6 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
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BZT55A3V6GS18 Overview

Zener Diode, 3.6V V(Z), 1%, 0.5W, Silicon, Unidirectional, SOD-80, QUADROMELF-2

BZT55A3V6GS18 Parametric

Parameter NameAttribute value
Parts packaging codeMELF
package instructionO-LELF-R2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
JESD-30 codeO-LELF-R2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
polarityUNIDIRECTIONAL
Maximum power dissipation0.5 W
Certification statusNot Qualified
Nominal reference voltage3.6 V
surface mountYES
technologyZENER
Terminal formWRAP AROUND
Terminal locationEND
Maximum voltage tolerance1%
Working test current5 mA
Base Number Matches1
BZT55C...
Vishay Telefunken
Silicon Epitaxial Planar Z–Diodes
Features
D
D
D
D
D
Very sharp reverse characteristic
Low reverse current level
Very high stability
Low noise
Available with tighter tolerances
96 12009
Applications
Voltage stabilization
Order Instruction
Type
BZT55C2V4
Ordering Code
BZT55C2V4–GS08
BZT55C2V4–GS18
Remarks
Tape and Reel (2.500 pcs)
Tape and Reel (10.000 pcs)
Absolute Maximum Ratings
T
j
= 25
_
C
Parameter
Power dissipation
Z–current
Junction temperature
Storage temperature range
Test Conditions
R
thJA
300K/W
x
Type
Symbol
P
V
I
Z
T
j
T
stg
Value
500
P
V
/V
Z
175
–65...+175
Unit
mW
mA
°
C
°
C
Maximum Thermal Resistance
T
j
= 25
_
C
Parameter
Junction ambient
Test Conditions
on PC board 50 mmx50 mmx1.6 mm
Symbol
R
thJA
Value
500
Unit
K/W
Electrical Characteristics
T
j
= 25
_
C
Parameter
Forward voltage
Test Conditions
I
F
=200mA
Type
Symbol
V
F
Min
Typ
Max
1.5
Unit
V
Document Number 85601
Rev. 4, 12-Mar-01
www.vishay.com
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