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1N4001

Description
1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size42KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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1N4001 Overview

1 A, SILICON, SIGNAL DIODE

1N4001 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionMINIATURE PACKAGE-2
stateACTIVE
packaging shaperound
Package SizeLONG FORM
Terminal formWire
terminal coatingNOT SPECIFIED
Terminal locationAXIAL
Packaging MaterialsUNSPECIFIED
structuresingle
Shell connectionisolation
Diode component materialssilicon
Diode typeSignal diode
Maximum average forward current1 A
BL
GALAXY ELECTRICAL
PLAST IC SILICON RECT IFIER
FEATURES
Low cos t
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
1N4001- - - 1N4007
VOLT AGE RANGE: 50 --- 1000 V
CURRENT : 1.0 A
DO - 41
MECHANICAL DATA
Cas e:JEDEC DO--41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces ,0.34 gram s
Mounting pos ition: Any
M AXIM UM RAT INGS AND ELECT RICAL CHARACT ERIST ICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
1N
4001
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average f orw ard rectif ied current
9.5mm lead lengths,
Peak f orw ard surge current
8.3ms s ingle half -s ine-w av e
superimposed on rated load
@T
J
=125
@T
A
=75
1N
1N
1N
1N
1N
1N
UNITS
4002 4003 4004 4005 4006 4007
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
R MS
V
DC
I
F (AV)
50
35
50
I
F SM
40.0
A
Maximum instantaneous f orw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
1.0
5.0
50.0
15
50
- 55 ---- + 150
- 55 ---- + 150
V
A
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Thermal resistance from junction to ambient.
www.galaxycn.com
Document Number 0260002
BL
GALAXY ELECTRICAL
1.

1N4001 Related Products

1N4001 1N4002 1N4004 1N4003
Description 1 A, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-41 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41
Number of terminals 2 2 2 2
Number of components 1 1 1 1
state ACTIVE TRANSFERRED ACTIVE TRANSFERRED
packaging shape round round round round
Package Size LONG FORM LONG FORM LONG FORM LONG FORM
Terminal form Wire Wire Wire Wire
Terminal location AXIAL AXIAL AXIAL AXIAL
Packaging Materials UNSPECIFIED Plastic/Epoxy UNSPECIFIED Glass
structure single single single single
Shell connection isolation isolation isolation isolation
Diode component materials silicon silicon silicon silicon
Diode type Signal diode Signal diode Signal diode Signal diode
Maximum average forward current 1 A 1 A 1 A 1 A
Processing package description MINIATURE PACKAGE-2 - CASE R-1, 2 PIN ALF-2, DO-41, 2 PIN
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