2SA812 datasheet, PDF - EEWORLD Datasheet

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2SA812: DescriptionSilicon Epitaxial Planar Transistor; File Size226KB，4 Pages; ManufacturerBILIN; Websitehttp://www.galaxycn.com/

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2SA812 Overview

Silicon Epitaxial Planar Transistor

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Galaxy Electrical

Silicon Epitaxial Planar Transistor

FEATURES

Commplementary to 2SC1623.

High DC current gain:h

=200typ.

=-6.0V,I

=-1.0mA)

High Voltage: V

CEO

=-50V

Production specification

2SA812

Lead-free

APPLICATIONS

Audio frequency, general purpose amplifier

SOT-23

ORDERING INFORMATION

Type No.

2SA812

Marking

M4/M5/M6/M7

Package Code

SOT-23

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

CEO

EBO

stg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction and Storage Temperature

Value

-60

-50

-5

-100

200

-55~150

Units

℃

Document number: BL/SSSTC010

Rev.A

www.galaxycn.com

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