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SZSMF33AT1

Description
DIODE TVS DIODE, Transient Suppressor
CategoryDiscrete semiconductor    diode   
File Size148KB,6 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric Compare View All

SZSMF33AT1 Overview

DIODE TVS DIODE, Transient Suppressor

SZSMF33AT1 Parametric

Parameter NameAttribute value
package instructionR-PDSO-F2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Maximum breakdown voltage40.6 V
Minimum breakdown voltage36.7 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-PDSO-F2
Maximum non-repetitive peak reverse power dissipation1000 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation0.385 W
GuidelineAEC-Q101; IEC-61000-4-2, 4-4
Maximum repetitive peak reverse voltage33 V
surface mountYES
technologyAVALANCHE
Terminal formFLAT
Terminal locationDUAL
Base Number Matches1
SMF5.0AT1 Series,
SZSMF5.0AT1 Series
200 W Transient
Voltage Suppressor
SOD-123 Flat Lead Package
The SMF5.0A Series is designed to protect voltage sensitive
components from high voltage, high energy transients. Excellent
clamping capability, high surge capability, low zener impedance and
fast response time. Because of its small size, it is ideal for use in
cellular phones, portable devices, business machines, power supplies
and many other industrial/consumer applications.
Features
http://onsemi.com
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSOR
5
58 VOLTS
200 WATT PEAK POWER
Stand−off Voltage: 5
58 Volts
Peak Power
200 Watts @ 1 ms (SMF5.0A
SMF58A)
Low Leakage
Response Time is Typically < 1 ns
ESD Rating of Class 3 (> 16 kV) per Human Body Model
ESD Rating of Level 4 (8 kV Contact Discharge) per IEC61000−4−2
EFT (Electrical Fast Transients) Rating of 40 A per IEC61000−4−4
Low Profile
Maximum Height of 1.0 mm
Small Footprint
Footprint Area of 8.45 mm
2
Supplied in 8 mm Tape and Reel
3,000 Units per Reel
Cathode Indicated by Polarity Band
Lead Orientation in Tape: Cathode Lead to Sprocket Holes
AEC−Q101 Qualified and PPAP Capable
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements
Pb−Free Packages are Available*
Mechanical Characteristics:
CASE:
Void-free, transfer-molded, thermosetting plastic
SOD−123FL
CASE 498
PLASTIC
1
1: CATHODE
2: ANODE
2
MARKING DIAGRAM
xx M
G
G
1
CATHODE
xx
M
G
2
ANODE
= Device Code (Refer to page 3)
= Date Code
= Pb−Free Package
Epoxy Meets UL 94 V−0
LEAD FINISH:
100% Matte Sn (Tin)
MOUNTING POSITION:
Any
QUALIFIED MAX REFLOW TEMPERATURE:
260C
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
SMFxxxAT1G
SZSMFxxxAT3G
Package
SOD−123FL
(Pb−Free)
SOD−123FL
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
Device Meets MSL 1 Requirements
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Semiconductor Components Industries, LLC, 2012
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
January, 2012
Rev. 4
1
Publication Order Number:
SMF5.0AT1/D

SZSMF33AT1 Related Products

SZSMF33AT1 SZSMF20AT1 SZSMF14AT1
Description DIODE TVS DIODE, Transient Suppressor DIODE TVS DIODE, Transient Suppressor DIODE TVS DIODE, Transient Suppressor
package instruction R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Other features EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE EXCELLENT CLAMPING CAPABILITY, LOW ZENER IMPEDANCE
Maximum breakdown voltage 40.6 V 24.5 V 17.2 V
Minimum breakdown voltage 36.7 V 22.2 V 15.6 V
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-PDSO-F2 R-PDSO-F2 R-PDSO-F2
Maximum non-repetitive peak reverse power dissipation 1000 W 1000 W 1000 W
Number of components 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 0.385 W 0.385 W 0.385 W
Guideline AEC-Q101; IEC-61000-4-2, 4-4 AEC-Q101; IEC-61000-4-2, 4-4 AEC-Q101; IEC-61000-4-2, 4-4
Maximum repetitive peak reverse voltage 33 V 20 V 14 V
surface mount YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maker - ON Semiconductor ON Semiconductor

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