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3TH41

Description
2.5 A, 1500 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size49KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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3TH41 Overview

2.5 A, 1500 V, SILICON, RECTIFIER DIODE, DO-201AD

BL
FEATURES
Low cos t
GALAXY ELECTRICAL
3TH41
VOLTAGE RANGE: 1500 V
CURRENT: 3.0 A
FAST RECOVERY RECT IFIER
DO - 27
Diffus ed junction
Low leakage
Low forward voltage drop
High current capability
Eas ily cleaned with Freon,Alcohol,Is opropanol
and s im ilar s olvents
The plas tic m aterial carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-27,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces ,1.15 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient tem perature unles s otherwis e s pecified.
Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%.
3TH41
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
UNITS
V
V
V
A
V
RR M
V
RMS
V
DC
I
F(AV)
1500
1050
1500
3.0
Peak forw ard surge current
8.3ms single half -sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
200.0
A
Maximum instantaneous forw ard voltage
@ 3.5 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.5
10.0
200.0
800
32
22
- 55---- +150
- 55---- +150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC .
3. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0261034
BL
GALAXY ELECTRICAL
1.

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