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BY297

Description
2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BY297 Overview

2 A, 200 V, SILICON, RECTIFIER DIODE, DO-15

BL
FEATURES
Low cost
GALAXY ELECTRICAL
BY296(Z)---BY299S(Z)
VOLTAGE RANGE: 100--- 1000 V
CURRENT: 2.0 A
FAST RECOVERY RECTIFIER
DO - 27
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight:0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BY
296
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BY
297
200
140
200
BY
298
400
280
400
2.0
BY
299
800
560
800
BY
299S
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
70.0
A
Maximum instantaneous forw ard voltage
@ 2.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.3
10.0
100.0
150
32
22
- 55---- +150
- 55---- +150
V
A
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261022
BL
GALAXY ELECTRICAL
1.

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BY297 BY296 BY298 BY299
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