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FEATURES
Low cost
GALAXY ELECTRICAL
BYT42A(Z)---BYT42M(Z)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.25 A
FAST RECOVERY RECTIFIER
DO-15
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT
42A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYT
42B
100
70
100
BYT
42D
200
140
200
BYT
42G
400
280
400
1.25
BYT
42J
600
420
600
BYT
42K
800
560
800
BYT
42M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous forw ard voltage
@ 1.25 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.4
5.0
100.0
200
18
45
- 55---- +150
- 55---- +150
V
A
ns
pF
／Ｗ
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261042
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
BYT42A(Z)---BYT42M(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
50
N.1.
10
N.1.
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
-0.25A
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-1.0A
1cm
NOTE
S:1.RISETIM =7ns M INP IM E
E
AX. UT P DANCE
=1M .22pF
2.RISETIM =10ns M SOURCEIM E
E
AX.
P DANCE
=5O
SE TIM BASEFOR 50/100 ns /cm
T E
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
30
20
T
J
=25
Pulse Width=300
µ
S
FIG.3 -- FORWARD DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
1.4
1.2
1.0
0.4
0.2
0.1
0. 0 6
0.04
0. 0 2
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120 140
160
180
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
AMBIENT TEMPERATURE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
AMPERES
200
FIG.5--PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
40
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
40
100
T
J
=25
f=1M
Hz
30
20
T
J
=125
8.3ms Single Half
Sine-Wave
10
0
1
10
100
REVERSE VOLTAGE,VOLTS
NUMBER OF CYCLES AT 60 Hz
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Document Number 0261042
BL
GALAXY ELECTRICAL
2.
Embedded System
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