BL
FEATURES
GALAXY ELECTRICAL
BYV96D(Z)---BYV96E(Z)
VOLTAGE RANGE: 800 --- 1000 V
CURRENT: 1.5 A
FAST RECOVERY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Is opropanol
and similar s olvents
The plas tic material carries U/L recognition 94V-0
DO - 15
MECHANICAL DATA
Case:JEDEC DO-15,molded plastic
Term inals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014ounces ,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unles s otherwis e specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYV 96D
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYV 96E
1000
700
1000
1.5
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
800
560
800
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 3.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.6
5.0
100.0
300
18
45
-55-----+150
-55-----+150
V
A
ns
pF
／Ｗ
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note2)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
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2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0261048
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
50
N.1.
10
N.1.
BYV96D(Z)---BYV96E(Z)
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
+0.5A
( - )
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
0
-0.25A
-1.0A
NOTES:1.RISETIM =7ns M INP IM DANCE=1M .22pF
E
AX. UT PE
2.RISETIM =10ns M SOURCEIM EDANCE
E
AX.
P
=5O
SE TIM BASE FOR 50/100 ns /cm
T E
1cm
FIG.2 --FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED CURRENT
FIG.3 --PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
50
1.5
40
1.2
0.9
30
AMPERES
0.6
20
0.3
Sngle Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
25
50
10
T
J
=125
8.3ms Single Half
Sine-Wave
0
0
1
2
4
6
10
20
40
60
100
75
1
0
0
125
1
5
0
175
AMBIENT TEMPERATURE,
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
REVERSE CURRENT,MCROAMPERES
NUMBER OF CYCLES AT 60 Hz
FIG.5--TYPICAL REVERSE CHARACTERISTICS
10
100
10
4
2
1.0
T
J
-
１２５
1.0
AMPERES
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6 0.8
1.0
1.2
T
J
=25
Pulse Width=300
µ
S
0.1
T
J
-
２５
0.01
1.4
1.6
1.8
2.0
0
20
40
60
80
100
120
140
FORWARD VOLTAGE,VOLTS
PERCENT OF FATED REVERSEVOLTAGE,%
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Document Number 0261048
BL
GALAXY ELECTRICAL
2.
ARM Technology
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