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FEATURES
GALAXY ELECTRICAL
BYT56A(Z)--- BYT56M(Z)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 3.0 A
HIGH EFFICIENCY ECTIFIERS
Fast recovery times
Ul 90V0 flame retardant epoxy molding compound
Diffused junction
Low cost
High surge current capability
Bevel round chip, aualanche operation
DO - 27
MECHANICAL DATA
Case:JEDEC DO--27,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces,1.15 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
BYT
56A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
BYT
56B
100
70
100
BYT
56D
200
140
200
BYT
56G
400
280
400
3.0
BYT
56J
600
420
600
BYT
56K
800
560
800
BYT
56M
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
150.0
A
Maximum instantaneous forw ard voltage
@ 3.0A
Maximum reverse current
@T
A
=25
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
75
1.4
10.0
150.0
100
50
30
- 55 ---- + 150
- 55 ---- + 150
V
A
ns
pF
／Ｗ
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0262025
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
BYT56A(Z)--- BYT56M(Z)
FIG.1 --TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
t
rr
+0.5A
(+)
PULSE
GENERATOR
(NOTE2)
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
(-)
50
N 1.
10
N 1.
D.U.T.
(+)
25VDC
(approx)
(-)
0
-0.25A
-1.0A
1 cm
NOTES:1.RISETIM
E=7ns M
AX.INPUT IM
PEDANCE
=1MΩ.22pF
2.RISETIM
E=10ns M
AX.source IM
PEDANCE=50Ω.
SET TIM BASEFOR 20/30 ns/cm
E
FIG.2 -- TYPICAL JUNCTION CAPACTTANCE
200
FIG.3 --PEAK FORWARD SURGE CURRENT
PEAKFORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
B YT56J - BY T56M
100
70
50
200
T
J
=25
8 .3 m s S in gle h alf sine w a ve
150
BYT56A - BYT56G
10
T
J
=25
100
50
1
.1
.2
.4
1 .0
2
10
4
20
40
100
0
1
10
100
1000
REVERSE VOLTAGE,VOLTS
FIG.4 -- TYPICAL FORWARD CURRENT
DERATING CURVE
NUMBER OF CYCLES AT 60Hz
FIG.5--TYPICAL FORWARD CHARACTERISTIC
100
6
5
4
3
2
S ig le p h a s e h a lf
w ave 60 H z
R e s is tiv e o r
In d u c tiv e lo a d
INSTANTANEOUS FORWARD CURRENT
AMPERES
AVERAGE FORWARD CURRENT.
AMPERES
10
T
J
=25
Pulse Width=300
s
1
0.1
0.01
0
0.4
0.6
1.2
1.4
25
50
75
100
125
150 175
1.6
1.8
AMBIENT TEMPERATURE( )
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Document Number 026025
BL
GALAXY ELECTRICAL
www.galaxycn.com
2.
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