HWL26NC
!
!
March 2004
V2
Features
•
Low Cost GaAs Power FET
•
Class A or Class AB Operation
•
17 dB Typical Gain at 2.4 GHz
•
5V to 10V Operation
376
Outline Dimensions
451.5
1
Description
The HWL26NC is a medium power GaAs FET
designed for various L-band & S-band applications.
226
2
4
226.0
76
Absolute Maximum Ratings
V
DS
V
GS
I
D
I
G
T
CH
T
STG
P
T
*
3
Drain to Source
Voltage
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Power Dissipation
+15V
-5V
I
DSS
1 mA
175
°
C
-65 to +175
°
C
1.7 W
0
0.0
75.5
275
440
524
Units:
µm
Thickness: 50
±5
Chip size
±50
Bond Pad 1, 3 (Source): 100 x 100
Bond Pad 2
(Gate): 100 x 100
Bond Pad 4
(Drain): 100 x 100
* mounted on an infinite heat sink
Electrical Specifications
(T
A
=25
°
C) f = 2.4 GHz for all RF Tests
Symbol
I
DSS
V
P
Parameters & Conditions
Saturated Current at V
DS
=3V, V
GS
=0V
Pinch-off Voltage at V
DS
=3V, I
D
=10 mA
Transconductance at V
DS
=3V, I
D
=100 mA
Power Output at Test Points
V
DS
=10V, I
D
=0.5 I
DSS
Gain at 1dB Compression Point
V
DS
=10V, I
D
=0.5 I
DSS
Power-Added Efficiency (P
OUT
= P
1dB
)
V
DS
=10V, I
D
=0.5 I
DSS
Units
mA
V
mS
dBm
dB
%
Min.
150
-3.5
-
25
15
30
Typ.
200
-2.0
120
26
16
40
Max.
280
-1.5
-
-
-
-
g
m
P
1dB
G
1dB
PAE
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
HWL26NC
!
!
March 2004
V2
Small Signal Common Source Scattering Parameters
S-MAGN AND ANGLES
VDS=10V, IDS=0.5I
DSS
(GHz)
0.50
0.60
0.70
0.80
0.90
1.00
1.10
1.20
1.30
1.40
1.50
1.60
1.70
1.80
1.90
2.00
2.10
2.20
2.30
2.40
2.50
2.60
2.70
2.80
2.90
3.00
3.10
3.20
3.30
3.40
3.50
3.60
3.70
3.80
3.90
4.00
lS11l
0.937
0.913
0.914
0.879
0.876
0.877
0.841
0.836
0.829
0.808
0.801
0.789
0.774
0.764
0.749
0.742
0.735
0.730
0.719
0.712
0.704
0.702
0.699
0.691
0.685
0.682
0.677
0.673
0.669
0.666
0.660
0.659
0.655
0.654
0.654
0.649
∠
ANG
-31.59
-36.66
-43.76
-48.51
-52.96
-58.75
-62.64
-67.67
-72.48
-76.57
-80.99
-84.77
-88.31
-92.13
-95.65
-98.77
-102.05
-105.18
-108.16
-111.27
-113.87
-116.48
-119.17
-121.69
-124.07
-126.73
-128.66
-131.03
-133.03
-135.18
-136.94
-138.99
-141.20
-142.72
-144.89
-146.36
lS21l
7.266
7.019
6.853
6.665
6.500
6.372
6.141
5.941
5.765
5.593
5.405
5.260
5.086
4.922
4.763
4.627
4.501
4.379
4.224
4.112
3.994
3.885
3.793
3.698
3.594
3.509
3.420
3.339
3.269
3.189
3.118
3.052
2.976
2.925
2.864
2.805
∠
ANG
154.62
150.87
147.84
143.96
140.47
137.32
133.92
130.86
128.22
125.43
122.53
120.03
117.70
115.31
112.97
110.70
108.73
106.93
104.69
102.73
100.83
99.36
97.68
96.00
94.13
92.49
90.96
89.48
87.98
86.58
85.05
83.73
82.18
80.79
79.38
78.25
lS12l
0.009
0.010
0.012
0.013
0.016
0.016
0.018
0.018
0.019
0.020
0.020
0.022
0.022
0.023
0.023
0.024
0.024
0.025
0.025
0.025
0.026
0.025
0.026
0.026
0.027
0.027
0.027
0.028
0.027
0.028
0.028
0.028
0.029
0.030
0.029
0.029
∠
ANG
67.60
71.96
70.20
65.51
62.61
60.98
60.19
57.63
56.57
56.60
53.30
53.04
53.41
51.56
50.83
50.81
49.19
49.32
48.70
47.52
48.07
48.93
47.71
46.92
48.15
47.53
46.75
47.21
46.44
47.13
47.88
47.91
48.50
49.20
48.35
49.49
lS22l
0.621
0.627
0.621
0.631
0.618
0.607
0.613
0.604
0.602
0.604
0.596
0.597
0.599
0.595
0.593
0.590
0.589
0.592
0.583
0.581
0.576
0.576
0.578
0.576
0.568
0.566
0.566
0.566
0.564
0.558
0.557
0.559
0.551
0.556
0.551
0.548
∠
ANG
-5.05
-6.70
-6.50
-8.01
-10.42
-11.30
-12.88
-13.41
-14.06
-14.73
-15.07
-16.45
-17.17
-17.33
-17.88
-18.69
-19.45
-19.67
-20.02
-20.34
-20.97
-21.26
-22.09
-22.52
-23.27
-23.60
-24.01
-24.41
-25.09
-25.64
-26.20
-26.72
-27.39
-28.40
-29.00
-29.68
Gate, drain pad: 1 wire on each pad
Source pad: 1 wires on each side
Bonding Manner
Hexawave Inc.
2 Prosperity Road II, Science-Based Industrial Park, Hsinchu, Taiwan. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw
All specifications are subject to change without notice.
Embedded System
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