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RG4Z

Description
3 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size48KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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RG4Z Overview

3 A, 200 V, SILICON, RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
RG4Y(Z) --- RG4C(Z)
VOLTAGE RANGE: 70--- 1000 V
CURRENT: 2.0--- 3.5 A
HIGH EFFICIENCY RECTIFIER
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with freon, alcohol, lsopropand and
similar solvents
DO - 27
MECHANICAL DATA
Case: JEDEC DO-27, molded plastic
Terminals: Axial leads,solderable per MIL-STD-202,
Method 208
Polarity: Color band denotes cathode
Weight: 0.041 ounces, 1.15grams
Mounting: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RG4Y
Maximum peak repetitive reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
Peak forw ard surge current
10ms single half-sine-w ave
superimplsed on rated load
@T
J
=125
Maximum instantaneous forw ard voltage
@ I
F
=I
F(AV)
Maximum reverse current
@T
A
=25
@T
A
=75
RG4Z
200
140
200
3.0
RG4
400
280
400
RG4A
600
420
600
2.0
RG4C
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
70
49
70
3.5
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JL
T
J
T
STG
100.0
80.0
50.0
60.0
A
1.3
1000.0
5000.0
1.7
1.8
2.0
500.0
3.0
V
A
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
2500.0
50
70
8
- 55 ----- + 150
- 55 ----- + 150
www.galaxycn.com
ns
50
pF
/W
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
Document Number 0262037
BL
GALAXY ELECTRICAL
1.

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RG4Z RG4 RG4A RG4Y RG4C RG4ZZ RG4AZ RG4YZ RG4CZ
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