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RN1Z

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size58KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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RN1Z Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE

BL
FEATURES
GALAXY ELECTRICAL
RN1Z(Z)
VOLTAGE RANGE: 200 V
CURRENT: 1.5 A
HIGH EFFICIENCY RECTIFIER
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
DO - 15
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
RN1Z
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
UNITS
V
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
1.5
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
60.0
A
Maximum instantaneous forw ard voltage
@ 1.5 A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
20.0
1000.0
50
50
50
- 55 ---- + 150
- 55 ---- + 150
V
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0262011
BL
GALAXY ELECTRICAL
1.

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Description 1.5 A, 200 V, SILICON, RECTIFIER DIODE 1.5 A, 200 V, SILICON, RECTIFIER DIODE

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