BL
FEATURES
Low cost
GALAXY ELECTRICAL
SG10A---SG10M
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
FAST RECOVERY RECTIFIERS
DO - 15
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon Alcohol,Isopropanol
and similar solvents
MECHANICAL DATA
Case: JEDEC DO-15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,50 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SG
10A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
SG
10B
100
70
100
SG
10D
200
140
200
SG
10G
400
280
400
1.0
SG
10J
600
420
600
SG
10K
800
560
800
SG
UNITS
10M
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
10ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
150
1.3
5.0
100.0
250
12
55
- 55 ---- +150
- 55 ---- +150
500
V
A
ns
pF
／Ｗ
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
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Document Number 0261067
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
t
rr
50
N.1.
10
N.1.
SG10A---SG10M
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-0.25A
-1.0A
N S:1.R TIM =7ns M IN U IM E AN E
OTE
ISE E
AX. P T P D C =1M .22pF
2.R TIM =10ns M SOU C IM E AN E
ISE E
AX.
R E P D C =5O
SE TIM BASEFOR50/100 ns /cm
T E
1cm
FIG.2 --FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.3 --PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
AMPERES
50
1.2
1.0
0.8
0.6
0.4
0.2
0
0
2
0
4
0
6
0
80
Single Phase
Half W 60H
Z
ave
Resistive or
Inductive Load
40
30
T
J
=25
8.3ms Single Half
Sine-Wave
20
10
0
1
10
100
100
120
140 160
180
200
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.4--TYPICAL FORWARD CHARACTERISTIC
INSTANTANEOUS FORWARD CURRENT
AMPERES
FIG.5-- TYPICAL JUNCTION CAPACITANCE
100
10
T
J
=25
Pulse Width=300
µ
S
100
JUNCTION CAPACITANCE,pF
20
16
14
12
10
6
4
2
1
0.1
0.2
0.4
1
2
4
10
20
40
100
4
2
1.0
0.4
0.2
0.1
0.06
T
J
=25
℃
f=1MHz
0.02
0.01
0.6 0.8
1.0
1.2
1.4
1.6
1.8
2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0261067
BL
GALAXY ELECTRICAL
2.
Power technology
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