BL
FEATURES
GALAXY ELECTRICAL
VOLTAGE RANGE: 30 V
CURRENT: 0.2 A
BAS85
SMALL SIGNAL SCHOTTKY DIODES
For general purpose applications
This diode features very low turn-on voltage
and fast switching. These devices are protected
by a PN junction guard ring against excessive
voltage, such as electrostatic discharges
Mini-melf
SOLDERABLE ENDS
1st BAND
2nd BAND
D2
MECHANICAL DATA
Case:JEDEC
mini-melf,glass
case
Polarity: Color band denotes cathode end
Weight: Approx.0.031
grams
0.022(0.559)
0.016(0.406)
0.145(3.683)
0.131(3.327)
D1=
0.066
0.060
(1.676)
(1.
524
)
0.022(0.559)
0.016(0.406)
D2=D1
0
0.008(0.20)
ABSOLUTE RATINGS
Symbols
Continuous reverse voltage
Forw ard continuous current
Peak forw ard current
Surge forw ard current
Pow er dissipation
Junction temperature
Ambient operating temperature range
Storage temperature range
@
@
@
T
A
=25
T
A
=25
t
p
<1s,T
A
=25
Value
30.0
200
1)
300
1)
600
1)
200
1)
125
c-55
---+ 125
c-55
---+ 150
UNITS
V
mA
mA
mA
mW
V
R
I
F
I
FM
I
FSM
P
tot
T
J
T
A
T
STG
@ T
A
=65
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
ELECTRICAL CHARACTERISTICS
Symbols
Reverse breakdow n voltage
Forw ard voltage
Pulse test tp<300 s, <2%
@ I
F
=0.1mA
@ I
F
=1mA
@ I
F
=10mA
@ I
F
=30mA
@ I
F
=100mA
Leakage current V
R
=25V
Junction capacitance at V
R
=1V,f=1MHz
Reverse recovery time @ I
F
=10mA,I
R
=10mA,I
R
=1mA
Thermal resistance junction to ambient
Min.
30.0
Typ.
Max.
UNITS
V
V
R
V
F
0.5
0.24
0.32
0.4
0.8
V
V
V
V
V
A
pF
ns
/W
I
R
C
J
t
rr
R
θ
JA
2.0
10
5
430
1)
1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
www.galaxycn.com
Document Number 0265016
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- ADMISSIBLEPOWERDISSIPATIONVS. AMBIENT
TEMPERATURE
FIG. 2--TYPICAL INSTANTANEOUS FORWORD
CHARACTERISTICS
BAS85
1000
P
tot
-Power ( mW )
200
Forward current (mA)
100
T
J
=125
T
J
= 25
10
100
1
T
J
= -4 0
0 .1
0
0 .0 1
100
200
0
0 .2 0 .4
0 .6
0 .8
1 .0
1 .2
T
A
- Ambient temperature( )
V
F
- Forward Voltage ( V)
FIG. 3 -- TYPICAL REVERSE CHARACTERISTICS
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
Reverse leakage current ( A)
Junction capacitance ( pF )
1000
T
J
= 1 2 5
100
14
12
10
8
6
4
2
0
0
5
10
15
20
25
30
100
10
75
1
50
25
0 .1
0 .0 1
5
10
15
20
25
30
V
R
- Reverse voltage ( V)
V
R
- Reverse voltage ( V)
www.galaxycn.com
Document Number 0265016
BL
GALAXY ELECTRICAL
2.
京公网安备 11010802033920号
EEWORLD
