BL
GALAXY ELECTRICAL
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
These diodes feature very low turn-on voltage and
fast guard ring against excessive voltage,such as
electrostatic discharges
200
m W power dissipation
These diodes are also available in
the SOD-123
case with the type designations BAT42W to
BAT43W and in designations LL42 to LL43
BAT42- - - BAT43
REVERSE VOLTAGE
:
30
V
CURRENT:
0.2
A
DO-35(GLASS)
MECHANICAL DATA
Case: DO-35, glass case
Polarity: Color band denotes cathode
Weight: 0.004 ounces, 0.13 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
25
am bient temperature unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
BAT42
Repetitive peak reverse voltage
V
RRM
Reverse breakdown voltage
I
R
=100µ A (pulsed)
V
(BR)
Average forw ard rectified current
half w ave rectification w ith resist.load
I
AV
@
T
A
=
25
and f 50Hz
Forw ard surge current @ t<10ms
Pow er dissipation
@ T
A
=
65
Junction temperature
Storage temperature range
BAT43
30
30
200.0
4
200
125
-55 --- +150
1)
UNITS
V
V
mA
A
mW
I
FSM
P
tot
T
J
T
STG
MIN
1)Valid prov ided that leads at a distance of
4
mm f rom case are kept at ambient temperature.
ELECTRICAL CHARACTERISTICS
TYP
-
-
-
-
-
-
MAX
1
1
0.4
0.65
0.33
0.45
UNITS
BAT42
BAT43
I
F
=10 mA
BAT42
I
F
=50 mA
BAT43
I
F
=2 mA
BAT43
I
F
=15 mA
BAT43
Capacitance
@ V
R
=1V
,f=1MH
Z
Reverse breakdown voltage
V
R
=25 V
V
R
=25 V,T
J
=100
Reverse recovery time
from I
F
=10mA to I
R
=10mA
I
rr
=1mA, R
L
=100Ω.
Thermal resistance junction to ambient
Rectification efficiency
(NOTE2)
2)R
L
=15K
Ω
C
L
=300
P
F,f=45MH
Z
,V
RF
=2V
Forw ard voltage
@I
F
=200 m A
V
F
-
-
-
-
-
-
V
C
tot
I
R
t
rr
R
θJA
η
v
-
-
-
7
-
-
-
0.5
100
pF
µ
A
-
-
5
300
-
1)
ns
K/W
-
0.80
-
1)Valid prov ided that leads at a distance of
4
mm f rom case are kept at ambient temperature.
www.galaxycn.com
C
Document Number 0265017
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
BAT42- - -BAT43
FIG.1 --FORWARD DERATING CURVE
PEAK FORWARD SURGE CURRENT
AMPERES
FIG.2 --PEAK FORWARD SURGE CURRENT
AVERAGE FORWARD CURRENT
m AMPERES
250
200
150
100
50
0
5
4
3
T
J
=125
8.3ms Single Half
Sine-Wave
2
1
0
0
50
100
150
200
1
10
100
AMBIENT TEMPERATURE,
NUMBER OF CYCLES AT 60 Hz
FIG.3--TYPICAL FORWARD CHARACTERISTIC
FIG.4--PEAK JUNCTION CAPACITANCE
INSTANTANEOUS FORWARD CURRENT
m AMPERES
JUNCTION CAPACITANCE,pF
100
1000
T
J
=25
Pulse Width=300
µ
S
200
100
40
20
10
6
4
BAT43
2
1
0
0.2
0.4 0.6
0.8
1.0
1.2
1.4
40
30
20
10
4
2
1
.1
.2
TJ=25
f=1MHz
.4
1.0
2
4
10
20
40
100
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
REVERSE VOLTAGE,VOLTS
www.galaxycn.com
Document Number 0265017
BL
GALAXY ELECTRICAL
2.
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