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SB240

Description
2 A, 40 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size53KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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SB240 Overview

2 A, 40 V, SILICON, RECTIFIER DIODE, DO-15

SB240 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPLASTIC PACKAGE-2
stateACTIVE
packaging shapeROUND
Package SizeLONG FORM
Terminal formWIRE
Terminal locationAXIAL
Packaging MaterialsPLASTIC/EPOXY
CraftsmanshipSCHOTTKY
structureSINGLE
Shell connectionISOLATED
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationGENERAL PURPOSE
Phase1
Maximum repetitive peak reverse voltage40 V
Maximum average forward current2 A
Maximum non-repetitive peak forward current60 A
BL
FEATURES
GALAXY ELECTRICAL
SB220 --- SB260
VOLTAGE RANGE: 20 --- 60V
CURRENT: 2.0 A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic m aterial carries U/L recognition 94V-0
DO - 15
MECHANICAL DATA
Case:JEDEC DO--15,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.014 ounces,0.39 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
am bient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SB220
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
SB230
30
21
30
SB240
40
28
40
2.0
SB250
50
35
50
SB260
60
42
60
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
20
14
20
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
50.0
A
Maximum instantaneous forw ard voltage
@ 2.0A (Note1)
Maximum reverse current
at rated DC blocking voltage
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note2)
(Note3)
V
F
I
R
C
J
R
θ
JA
T
J
T
STG
0.55
0.5
20.0
170
35
-
55
---- + 125
-
55
---- + 150
0.70
V
mA
pF
/W
Operating junction temperature range
Storage temperature range
Note: 1. Pulse test : 300 s pulse width,1% duty cy cle.
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3.Thermal resistance junction to ambient.
www.galaxycn.com
Document Number 0266005
BL
GALAXY ELECTRICAL
1
.

SB240 Related Products

SB240 SB220 SB230 SB250 SB260
Description 2 A, 40 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 20 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 30 V, SILICON, RECTIFIER DIODE, DO-15 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC 2 A, 60 V, SILICON, RECTIFIER DIODE, DO-15
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