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1N4935G

Description
1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size80KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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1N4935G Overview

1 A, 200 V, SILICON, SIGNAL DIODE, DO-41

BL
FEATURES
Low cost
Low leakage
GALAXY ELECTRICAL
1N4933G---1N4937G
VOLTAGE RANGE: 50 --- 600 V
CURRENT: 1.0 A
GLASS
PASSIVATED JUNCTION
DO - 41
Glass passivated junction
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohil,Isopropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
1N
4933G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
1N
4934G
100
70
100
1N
4935G
200
140
200
1.0
1N
4936G
400
280
400
1N
4937G
600
420
600
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@1.0
A
Maximum reverse current
at rated DC blocking voltage
Maximym reverse capacitance
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=100
(Note1)
(Note2)
(Note3)
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
1.3
5.0
100.0
200
12.0
22.0
- 55---- +175
- 55---- + 175
V
A
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A I
R
=1A I
rr
=0.25A.
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
Document Number 0269004
BL
GALAXY ELECTRICAL
1.

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