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SBL835

Description
8 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC
Categorysemiconductor    Discrete semiconductor   
File Size115KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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SBL835 Overview

8 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AC

BL
FEATURES
GALAXY ELECTRICAL
SBL830---SBL8100
VOLTAGE RANGE:
30
---
100
V
CURRENT:
8.0
A
SCHOTTKY BARRIER RECTIFIER
Metal-Semiconductor junction with guard ring
Epitaxial construction
Low forward voltage drop,low switching losses
High surge capability
For use in low voltage,high frequency inverters free
xxxx
wheeling,and polarity protection applications
The plastic material carries U/L recognition 94V-0
TO - 220AC
MECHANICAL DATA
Case:JEDEC TO--220AC,molded plastic
Terminals: Leads solderable per
MIL- STD-750,Method 2026
Polarity: As marked
Weight: 0.064 ounces,1.81 gram
Mounting position: Any
(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
SBL
SBL SBL SBL SBL SBL SBL SBL SBL SBL
UNITS
830 835 840 845 850 860 870 880 890 8100
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
T
C
=95
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load T
J
=125
Maximum instantaneous forw ard voltage
@ 8.0A
Maximum reverse current
@T
C
=25
V
RRM
V
RMS
V
DC
I
F(AV)
30
21
30
35
25
35
40
28
40
45
32
45
50
35
50
8.0
60
42
60
70
49
70
80
56
80
90
63
90
100
70
100
V
V
V
A
I
FSM
V
F
I
R
R
θ
JC
T
J
T
STG
0.55
200
A
0.70
0.5
55
6.9
-55--- + 150
-55--- + 150
0.85
V
mA
/W
at rated DC blocking voltage @T
C
=100
Typical thermal resistance
(Note1)
Operating junction temperature range
Storage temperature range
Note: 1. Thermal resistance junction to case.
www.galaxycn.com
Document Number 0267061
BL
GALAXY ELECTRICAL
1.

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