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UF4001G

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
Categorysemiconductor    Discrete semiconductor   
File Size77KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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UF4001G Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-41

BL
FEATURES
Low cost
GALAXY ELECTRICAL
UF4001G---UF4007G
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.0 A
GLASS
PASSIVATED
RECTIFIER
DO - 41
Glass passivated juntion
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohil,Isopropanop
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Case:JEDEC DO-41,molded plastic
Terminals: Axial lead ,solderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012ounces,0.34 grams
Mounting position: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
UF
4001G
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
UF
4002G
100
70
100
UF
UF
UF
UF
UF
UNITS
4003G 4004G 4005G 4006G 4007G
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@1.0
A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θJA
T
J
T
STG
1.0
10.0
100.0
50
20
50.0
- 55---- +175
- 55---- +175
1.7
V
A
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
75
10
ns
pF
/W
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured at 1.0MHz and applied rev erse v oltage of 4.0V DC.
2. Thermal resistance f rom junction to ambient.
www.galaxycn.com
Document Number 0269011
BL
GALAXY ELECTRICAL
1.

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