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FEATURES
GALAXY ELECTRICAL
RS1A - - - RS1M
REVERSE VOLTAGE: 50 --- 1000 V
CURRENT:
1.0A
SURFACE MOUNT RECTIFIER
Plastic package has
underwriters laborator
flammability classification
94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
Glass passivated chip junction
High temperature soldering:
111
250
o
C/10 seconds at terminals
111
DO - 214AC(SMA)
MECHANICAL DATA
Case:JEDEC DO-214AC,molded plastic over
1111passivated
chip
Terminals:Solder plated, solderable per MIL-STD-
1111750,
Method 2026
Polarity: color band denotes cathode end
Weight: 0.002 ounces, 0.064 gram
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
RS1A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ord rectified current
c
@
T
L
=90
O
C
Peak forward surge current 8.3ms single
c
half-sine-wave superimposed on rated
c
load
Maximum instantaneous forw ard voltage at
1.0A
Maximum DC reverse current
@T
A
=25
o
C
o
RS1B
100
70
100
RS1D RS1G RS1J RS1K RS1M
200
140
200
400
280
400
1.0
30.0
1.30
5.0
600
420
600
800
560
800
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RWS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
R
JA
JL
50
35
50
A
V
A
at rated DC blocking voltage @T
A
=125 C
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
50.0
150
10
105
32
- 55 ------ + 150
250
500
7.0
o
ns
pF
C/W
o
Operating junction and storage temperature range
T
J
T
STG
NOTE: 1.Rev erse recov ery time test conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts
C
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3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.2''X0.2''(5.0X5.0mm
2
) copper pad areas
Document Number 0280003
BL
GALAXY ELECTRICAL
1.
RATINGS AND CHARACTERISTIC CURVES
Fig. 1 — Forward Current
Derating Curve
1.2
50
Resistive or Inductive Load
RS1A- - -RS1M
Fig. 2 — Maximum Non-Repetitive
Peak Forward Surge Current
Peak Forward Surge Current (A)
T
L
= 90°C
8.3ms Single Half Sine-Wave
(JEDEC Method)
Average Forward Rectified Current (A)
1.0
40
30
0.5
20
10
P.C.B. Mounted on 0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
0
0
20
40
60
80
100
120
140
160
180
0
1
10
100
Lead Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 — Typical Instantaneous
Forward Characteristics
30
30
Fig. 4 — Typical Reverse
Characteristics
Instantaneous Reverse Current (µA)
10
Instantaneous Forward Current (A)
10
T
J
= 125°C
T
J
= 125°C
1
T
J
= 25°C
0.1
Pulse Width = 300µs
1% Duty Cycle
1
T
J
= 100°C
0.1
T
J
= 25°C
0.01
0
20
40
60
80
100
0.01
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 — Typical Junction
Capacitance
30
100
Fig. 6 — Typical Transient
Thermal Impedance
Transient Thermal Impedance (°CW)
Mounted on 0.2 x 0.2" (5 x 5mm)
Copper Pad Area
Junction Capacitance (pF)
T
J
= 25°C
f = 1.0MH
Z
Vsig = 50mVp-p
10
10
1
1
10
100
1
0.01
0.1
1
10
Reverse Voltage (V)
t, Pulse Duration (sec.)
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Document Number 0280003
BL
GALAXY ELECTRICAL
2.
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