EEWORLDEEWORLDEEWORLD

Part Number

Search

S2D

Description
1.5 A, 200 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size47KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
Download Datasheet Compare View All

S2D Online Shopping

Suppliers Part Number Price MOQ In stock  
S2D - - View Buy Now

S2D Overview

1.5 A, 200 V, SILICON, RECTIFIER DIODE

BL
GALAXY ELECTRICAL
SURFACE MOUNT RECTIFIERS
FEATURES
Plastic package has Underwriters Laboratory
111
Flammability Classification 94V-0
For surface mounted applications
Low profile package
Built-in strain relief,ideal for automated placement
High current capability
High temperature soldering:
111
250
o
C/10 seconds at terminals
S2A - - - S2M
111REVERSE
VOLTAGE: 50 --- 1000 V
CURRENT:
2.0
A
DO - 214AA(SMB)
MECHANICAL DATA
Case:JEDEC DO-214AA,molded plastic over
1111passivated
chip
Terminals:Solder Plated, solderable per MIL-STD-
1111750,
Method 2026
Polarity: Color band denotes cathode end
Weight: 0.003 ounces, 0.093 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified
S2A
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC Blocking Voltage
Maximum average forw ord rectified current at
V
T
L
=100
O
C
Peak forw ard surge current @ T
L
= 110°C 8.3ms
V
single half-sine-w ave superimposed on rated
V
load(JEDEC Method)
Maximum Instantaneous Forw ard Voltage at 2.0A
Maximum DC reverse current
at rated DC blocking voltage
@T
A
=25
o
C
@T
A
=125 C
o
S2B
SB
100
70
100
S2D
SD
200
140
200
S2G
SG
400
280
400
2.0
50.0
1.15
1.0
125.0
S2J
SJ
600
420
600
S2K
SK
800
560
800
S2M
UNITS
SM
1000
700
1000
V
V
V
A
A
V
μA
μS
pF
o
SA
V
RRM
V
RWS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
R
θJL
50
35
50
Maximum reverse recovery time (NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resitance (NOTE 3)
2.0
30.0
53.0
16.0
-55--------+150
C/W
o
Operating junction and storage temperature range
T
J
T
STG
NOTE: 1.Rev erse recov ery time test conditions:I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
C
www.galaxycn.com
2. Measured at 1.0MHz and applied rev erse v oltage of 4.0 Volts
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm
2
) copper pad areas
Document Number 0280002
BL
GALAXY ELECTRICAL
1.

S2D Related Products

S2D S2A S2G S2J S2B S2K S2M
Description 1.5 A, 200 V, SILICON, RECTIFIER DIODE NKK SWITCHES - S2A - SWITCH; TOGGLE; SPDT; 20A; 250VAC 1.5 A, 400 V, SILICON, RECTIFIER DIODE 2 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA FAIRCHILD SEMICONDUCTOR - S2B - STANDARD DIODE; 2A; 100V; DO-214AA 2 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AA 1.5 A, 1000 V, SILICON, RECTIFIER DIODE

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1034  2449  1772  2137  2245  21  50  36  44  46 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号