, O
ne.
20 STERN AVE.
SPRINGFIELD, NEW JEf RSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
COU.ECTOR
3
>-&\J
n
i
EMITTER
MAXIMUM RATINGS
Rating
CoHeclor-Emilter Voltage
CoHecur Ba«Vbllagi
Emitter-Baia Voltage
Collector Currant— Contiruoui
Tout Device DuHlpiHon a T
A
-25-C
Derate above 2S°C
Total Device DkwoaOcn « T
c
- 25*C
Derate above 2S*C
Operating ind Storage Junction
Temperabre Range
THERMAL CHARACTERISTICS
Charecterlettc
TtiermelReaielence. Junction to Case
Symbol
RBJC
alax
70
Unit
Symbol
value
Unit
BSS71
VCEO
VCBO
v
EBO
Ic
PQ
PD
Tj,T,
lg
200
2*)
6.0
0.5
05
288
2.5
14.3
-65 to. 200
Vdc
Vdc
Vdc
Adc
Watta
Want
mwr'C
•C
/
Mln
•cm
Symbol
ELECTRICAL CHARACTERISTICS (T
A
< 25% urieia othuwlge noted)
Chancterlatlc
OFF CHARACTERISTICS
Co»Mtor-&T*ler Breakdown Vottage (Ic • 10 nAdc. IB • 0)(1 )
CoHedor-Baae Breakdown Voltage (Ic • 100 iiAdc, lg • 0)
E miner-Ban BrMKdmm UOUge (IE * 100 iiAdc, IG = 0]
Couctw CuUtr Current (VCB * 150 Vdc. IE ' 0)
CoUector-&i*er Cutoff Current (V
CE
- 1 50 Vdc, IB • 0)
Emitter Cutoff Current (VEB
- 5.0 Vdc. I
C
* 0)
ON CHARACTERISTICS
DC Current Gain
(1C - 0.1 mAdc. VCE
3
I-" Vdc)
(1C • 10 mAdc, VCE "
10 v<fc
)
(1
'
(l
c
*
30
mAdc. VCE " 10 Wl*
1
1
Collector-EmMar Saturation VoltageO )
(1C • 10 mAdc. I
B
- 1 0 mAdc)
(IC« 30 mAdc. IB -3.0 mAdc)
(1C - 50 mAdc. IB - 5.0 mAdc)
BaM-Emttar Saturation Voltaged)
(1C • 10 mAdc. IB * 1.0 mAdc)
(1C * 30 mAdc. IB • 3.0 mAdc)
(1C * 50 mAdc. IB
*
5.0 mAdc)
Puts* Teet: Puke Width
s
300 !Ui. Duty Cycles 20%.
CnaraetarMIc
1YNAMIC CHARACTERISTICS
Current-Cain — Band*Uth Product
(1C • 20 mAdc, VCE
• 20 Vdc, l« 20 MHz)
Output Capacitance
(|
E
i o. V
CB
= 20
Vdc.
I
= 1 .0
MHZ)
Input Ctpadttnce
Symbol
v
CE(«et)
Typ
-
-
-
-
-
—
Ha.
Unit
V(BR)CEO
V(BR)CfiO
V(BFt)EBO
200
200
60
—
-
—
-
-
-
50
500
50
Vdc
Vdc
Vdc
nAdc
nAdc
ICBO
ICEO
%BO
"A*
20
30
SO
40
40
45
120
140
0.15
025
0.35
07
0.8
0.85
250
Vdc
0.3
0.4
0.5
-
VBE(Mt)
Vdc
-
0.8
0.9
1.0
Mm
50
—
—
—
—
Typ
70
35
45
100
400
Mai
Unit
H
Cob
Cib
ton
loT
200
—
MHz
PF
t
dc = o. VEB = 05 vdc.
.1.0 MHZ,
i
Turn-On Time
(I
B1
= 10 mAdc. I
C
=50 mAdc. v
cc
= 100 Vdc)
Turn-Ofl Time
dB2 • 10 mAdc. t «50 mAdc. Vcc • 100 Vdc)
—
—
—
PF
nc
"*
m
7
NOTES
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Quality Semi-Conductors
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