BC549C, BC550C
Low Noise Transistors
NPN Silicon
Features
•
These are Pb−Free Devices*
MAXIMUM RATINGS
Rating
Collector −Emitter Voltage
BC549C
BC550C
Collector −Base Voltage
BC549C
BC550C
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ T
A
= 25°C
Derate above = 25°C
Total Device Dissipation @ T
A
= 25°C
Derate above = 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
P
D
P
D
T
J
, T
stg
V
CBO
30
50
5.0
100
625
5.0
1.5
12
−55 to +150
Vdc
Vdc
mW
mW/°C
W
mW/°C
°C
Symbol
V
CEO
30
45
Vdc
Value
Unit
Vdc
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COLLECTOR
1
2
BASE
3
EMITTER
3
STRAIGHT LEAD
BULK PACK
12
TO−92
CASE 29
STYLE 17
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC5x
yC
AYWW
G
G
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
BC5xyC = Device Code
x = 4 or 5
y = 9 or 0
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BC549CG
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
Package
TO−92
(Pb−Free)
TO−92
(Pb−Free)
Shipping
5000 Units / Bulk
BC550CG
5000 Units / Bulk
1
March, 2007 − Rev. 2
Publication Order Number:
BC550C/D
BC549C, BC550C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(I
C
= 10 mAdc, I
B
= 0)
Collector −Base Breakdown Voltage
(I
C
= 10
mAdc,
I
E
= 0)
Emitter −Base Breakdown Voltage
(I
E
= 10
mAdc,
I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 30 V, I
E
= 0, T
A
= +125°C)
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
ON CHARACTERISTICS
DC Current Gain
(I
C
= 10
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
Collector −Emitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 0.5 mAdc)
(I
C
= 10 mAdc, I
B
= see note 1)
(I
C
= 100 mAdc, I
B
= 5.0 mAdc, see note 2)
Base−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
Base−Emitter On Voltage
(I
C
= 10
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 100
mAdc,
V
CE
= 5.0 Vdc)
(I
C
= 2.0 mAdc, V
CE
= 5.0 Vdc)
SMALL−SIGNAL CHARACTERISTICS
Current −Gain — Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
Collector−Base Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
Small−Signal Current Gain
(I
C
= 2.0 mAdc, V
CE
= 5.0 V, f = 1.0 kHz)
Noise Figure
(I
C
= 200
mAdc,
V
CE
= 5.0 Vdc, R
S
= 2.0 kW, f = 1.0 kHz)
(I
C
= 200
mAdc,
V
CE
= 5.0 Vdc, R
S
= 100 kW, f = 1.0 kHz)
1. I
B
is value for which I
C
= 11 mA at V
CE
= 1.0 V.
2. Pulse test = 300
ms
− Duty cycle = 2%.
f
T
−
C
cbo
−
h
fe
450
NF
1
NF
2
−
−
600
0.6
−
900
dB
2.5
10
2.5
−
−
250
−
pF
MHz
h
FE
100
420
V
CE(sat)
−
−
−
V
BE(sat)
−
V
BE(on)
−
−
0.55
0.52
0.55
0.62
−
−
0.7
1.1
−
Vdc
0.075
0.3
0.25
0.25
0.6
0.6
Vdc
270
500
−
800
Vdc
−
V
(BR)CEO
45
V
(BR)CBO
50
V
(BR)EBO
5.0
I
CBO
−
−
I
EBO
−
−
15
−
−
15
5.0
nAdc
mAdc
nAdc
−
−
−
−
Vdc
−
−
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
R
S
i
n
e
n
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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2
BC549C, BC550C
2.0
hFE, NORMALIZED DC CURRENT GAIN
1.5
1.0
0.8
0.6
0.4
0.3
0.2
0.2
V
CE
= 10 V
T
A
= 25°C
V, VOLTAGE (VOLTS)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.5
1.0 2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mAdc)
100 200
0
0.1
0.2
V
CE(sat)
@ I
C
/I
B
= 10
0.5
1.0 2.0
5.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
50
100
T
A
= 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 10 V
Figure 2. Normalized DC Current Gain
BANDWIDTH PRODUCT (MHz)
Figure 3. “Saturation” and “On” Voltages
400
300
C, CAPACITANCE (pF)
200
100
80
60
40
30
20
10
7.0
5.0
C
ib
T
A
= 25°C
V
CE
= 10 V
T
A
= 25°C
3.0
C
ob
2.0
f T, CURRENT−GAIN
0.5 0.7
1.0
2.0
5.0 7.0 10
20
I
C
, COLLECTOR CURRENT (mAdc)
50
1.0
0.4
0.6
1.0
2.0
4.0
10
V
R
, REVERSE VOLTAGE (VOLTS)
20
40
Figure 4. Current−Gain — Bandwidth Product
Figure 5. Capacitance
r b, BASE SPREADING RESISTANCE (OHMS)
170
160
150
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25°C
140
130
120
0.1
0.2
0.5
1.0
2.0
I
C
, COLLECTOR CURRENT (mAdc)
5.0
10
Figure 6. Base Spreading Resistance
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3
BC549C, BC550C
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
R
P
L
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
B
STRAIGHT LEAD
BULK PACK
K
X X
G
H
V
1
D
J
C
SECTION X−X
N
N
R
A
B
BENT LEAD
TAPE & REEL
AMMO PACK
P
T
SEATING
PLANE
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER
K
X X
G
D
J
V
C
SECTION X−X
N
1
DIM
A
B
C
D
G
J
K
N
P
R
V
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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BC550C/D
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