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BC556RLRM

Description
100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size78KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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BC556RLRM Overview

100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC556RLRM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage65 V
ConfigurationSINGLE
Minimum DC current gain (hFE)120
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typePNP
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)280 MHz
Base Number Matches1
BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
Features
http://onsemi.com
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC556
BC557
BC558
Collector - Base Voltage
BC556
BC557
BC558
Emitter - Base Voltage
Collector Current − Continuous
Collector Current
− Peak
Base Current − Peak
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
CM
I
BM
P
D
P
D
T
J
, T
stg
V
CBO
−80
−50
−30
−5.0
−100
−200
−200
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
Symbol
V
CEO
−65
−45
−30
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
12
1
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
55xx
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
March, 2007 − Rev. 3
Publication Order Number:
BC556B/D

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Description 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN, BIP General Purpose Small Signal 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN TRANSISTOR 100 mA, 65 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN, BIP General Purpose Small Signal 100mA, 65V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
package instruction CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 TO-226AA, 3 PIN TO-226AA, 3 PIN TO-226AA, 3 PIN
Contacts 3 3 3 3 3 3 3 3 3 3
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 65 V 65 V 65 V 65 V 65 V 65 V 65 V 65 V 65 V 65 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 120 120 120 120 120 180 180 180 180 120
JEDEC-95 code TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92 TO-92
JESD-30 code O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3 O-PBCY-T3
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
Number of components 1 1 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Peak Reflow Temperature (Celsius) 225 225 225 225 225 225 225 225 225 225
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO NO NO
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 280 MHz 280 MHz 280 MHz 280 MHz 280 MHz 280 MHz 280 MHz 280 MHz 280 MHz 280 MHz
Maximum operating temperature 150 °C 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C -
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Index Files: 1713  1654  1610  776  2007  35  34  33  16  41 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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