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BFR181-E6433

Description
RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN
CategoryDiscrete semiconductor    The transistor   
File Size166KB,7 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BFR181-E6433 Overview

RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN

BFR181-E6433 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW NOISE
Maximum collector current (IC)0.02 A
Collector-based maximum capacity0.45 pF
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
highest frequency bandL BAND
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment0.175 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)8000 MHz
Base Number Matches1

BFR181-E6433 Related Products

BFR181-E6433 BFR181-E6327
Description RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN RF Small Signal Bipolar Transistor, 0.02A I(C), 1-Element, L Band, Silicon, NPN
package instruction SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW NOISE LOW NOISE
Maximum collector current (IC) 0.02 A 0.02 A
Collector-based maximum capacity 0.45 pF 0.45 pF
Collector-emitter maximum voltage 12 V 12 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
highest frequency band L BAND L BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power consumption environment 0.175 W 0.175 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 8000 MHz 8000 MHz
Base Number Matches 1 1
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