BFS480E6327 datasheet, PDF - EEWORLD Datasheet

BFS480E6327: DescriptionRF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN; CategoryDiscrete semiconductor The transistor; File Size137KB，6 Pages; ManufacturerSIEMENS; Websitehttp://www.infineon.com/

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BFS480E6327 Overview

RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	0.01 A
Collector-based maximum capacity	0.4 pF
Collector-emitter maximum voltage	8 V
Configuration	SEPARATE, 2 ELEMENTS
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	7500 MHz
Base Number Matches	1

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