IXTP75N10P datasheet, PDF - EEWORLD Datasheet

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IXTP75N10P: DescriptionPower Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size294KB，6 Pages; ManufacturerLittelfuse; Websitehttp://www.littelfuse.com; Environmental Compliance

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IXTP75N10P Overview

Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

IXTP75N10P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1000 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (ID)	75 A
Maximum drain-source on-resistance	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PolarHT

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

IXTA 75N10P

IXTP 75N10P

IXTQ 75N10P

DS(on)

DSS

D25

≤

100 V

75 A

Ω

25 mΩ

TO-263 (IXTA)

Symbol

DSS

DGR

GSM

D25

dv/dt

stg

SOLD

Weight

Test Conditions

= 25° C to 175° C

= 25° C to 175° C; R

= 1 MΩ

Continuous

Transient

= 25° C

= 25° C, pulse width limited by T

= 25° C

≤

, di/dt

≤

100 A/µs, V

≤

DSS

≤

150° C, R

= 10

Ω

= 25° C

Maximum Ratings

100

±20

±30

200

1.0

360

-55 ... +175

175

-55 ... +175

V/ns

°C

D S

(TAB)

TO-220 (IXTP)

TO-3P (IXTQ)

D = Drain

TAB = Drain

(TAB)

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

Mounting torque

TO-3P

TO-220

TO-263

(TO-3P / TO-220)

300

260

G = Gate

S = Source

1.13/10 Nm/lb.in.

5.5

Features

Symbol

Test Conditions

= 25° C, unless otherwise specified)

DSS

GS(th)

GSS

DSS

DS(on)

= 0 V, I

= 250

µA

= V

, I

= 250µA

±20

, V

= 0

= V

DSS

= 0 V

= 125° C

Characteristic Values

Min. Typ.

Max.

100

3.0

5.5

±100

250

µA

Ω

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

Advantages

Easy to mount

Space savings

High power density

= 10 V, I

= 0.5 I

D25

Pulse test, t

≤

300

µs,

duty cycle d

≤

2 %

DS99158E(12/05)

IXTP75N10P Related Products

	IXTP75N10P	IXTA75N10P	IXTQ75N10P
Description	Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN	Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN	Power Field-Effect Transistor, 75A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN
Is it Rohs certified?	conform to	conform to	conform to
package instruction	FLANGE MOUNT, R-PSFM-T3	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	compliant	not_compliant	compliant
Other features	AVALANCHE RATED	AVALANCHE RATED	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	1000 mJ	1000 mJ	1000 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V	100 V
Maximum drain current (ID)	75 A	75 A	75 A
Maximum drain-source on-resistance	0.025 Ω	0.025 Ω	0.025 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSFM-T3	R-PSSO-G2	R-PSFM-T3
JESD-609 code	e3	e3	e3
Number of components	1	1	1
Number of terminals	3	2	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	175 °C	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	SMALL OUTLINE	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	200 A	200 A	200 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	NO
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	THROUGH-HOLE	GULL WING	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
JEDEC-95 code	TO-220AB	TO-263AB	-
Maker	-	Littelfuse	Littelfuse

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