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S07B

Description
0.7 A, 100 V, SILICON, SIGNAL DIODE, DO-219AB
Categorysemiconductor    Discrete semiconductor   
File Size80KB,3 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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S07B Overview

0.7 A, 100 V, SILICON, SIGNAL DIODE, DO-219AB

BL
FEATURES
GALAXY ELECTRICAL
S07B --- S07M
REVERSE VOLTAGE: 100 - 1000 V
CURRENT: 0.7 A
SOD - 123FL
Cathode Band
Top View
SURFACE MOUNT RECTIFIER
Glass passivated device
Ideal for surface mouted applications
Low leakage current
Metallurgically bonded construction
High temperature soldering:
250℃/10 seconds at terminals
1.8 0.1
1.0 0.2
2.8 0.1
0.05 0.30
0.98 0.1
MECHANICAL DATA
Case:JEDEC SOD-123FL,molded plastic over
passivated chip
Terminals:Solder Plated, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.006 ounces, 0.02 gram
Mounting position: Any
5
0.60 0.25
3.7 0.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.
ABSOLUTE RATINGS
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forword
rectified current
T
A
=65℃
(NOTE 1)
S07B
B0
V
RRM
V
RMS
V
DC
I
(AV)
100
70
100
S07D
D0
200
140
200
S07G
G0
400
280
400
0.7
S07J
J0
600
420
600
S07M
M0
1000
700
1000
UNITS
V
V
V
A
Peak forward surge current 8.3ms single
half-sine-wave superimposed
on rated load
T
L
=25℃
(NOTE 2)
I
FSM
R
jθA
T
j
T
STG
25
A
Typical thermal resistance
180
- 55 --- + 150
- 55 --- + 150
K/W
www.galaxycn.com
Operating temperature range
Storage temperature range
NOTES:1.Averaged over any 20 ms period.
2. Thermal resistance junction to ambient, 6.0 mm
2
coppeer pads to each terminal.
Document Number 0280059
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GALAXY ELECTRICAL
1.

S07B Related Products

S07B S07D S07G S07J S07M
Description 0.7 A, 100 V, SILICON, SIGNAL DIODE, DO-219AB 0.7 A, 200 V, SILICON, SIGNAL DIODE, DO-219AA 0.7 A, 400 V, SILICON, SIGNAL DIODE, DO-219AB 0.7 A, 600 V, SILICON, SIGNAL DIODE, DO-219AB 0.7 A, 1000 V, SILICON, SIGNAL DIODE, DO-219AB

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