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5082-1002

Description
Rectifier Diode, 1 Element, 0.3A, 35V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size100KB,4 Pages
ManufacturerHP(Keysight)
Websitehttp://www.semiconductor.agilent.com/
Download Datasheet Parametric Compare View All

5082-1002 Overview

Rectifier Diode, 1 Element, 0.3A, 35V V(RRM),

5082-1002 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum output current0.3 A
Maximum repetitive peak reverse voltage35 V
Maximum reverse recovery time0.002 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

5082-1002 Related Products

5082-1002 5082-1006 5082-1001
Description Rectifier Diode, 1 Element, 0.3A, 35V V(RRM), Rectifier Diode, 1 Element, 0.15A, 50V V(RRM), Silicon Rectifier Diode, 1 Element, 0.15A, 35V V(RRM),
Is it Rohs certified? incompatible incompatible incompatible
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1 V 1 V 1 V
JESD-609 code e0 e0 e0
Number of components 1 1 1
Maximum operating temperature 175 °C 175 °C 175 °C
Maximum output current 0.3 A 0.15 A 0.15 A
Maximum repetitive peak reverse voltage 35 V 50 V 35 V
Maximum reverse recovery time 0.002 µs 0.0015 µs 0.0015 µs
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1 -
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