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W02M

Description
GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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GENESIC SEMICONDUCTOR - W02M - BRIDGE RECTIFIER; 1PH; 1.5A; 200V; DOB

BL
FEATURES
GALAXY ELECTRICAL
W005M(G) - - - W10M(G)
VOLTAGE RANGE: 50 --- 1000 V
CURRENT: 1.5 A
SILICON BRIDGE RECTIFIERS
Rating to 1000V PRV
Surge overload rating to 50 Amperes peak
WOM
A
.150(3.8)
.130(3.3)
.305(7.75)
.265(6.73)
.220(6.73)
.180(4.6)
B
.360(9.1)
.340(8.6)
.395(10.0)
.355(9.0)
.340(8.6)
.300(7.6)
B
RB15
WO
WOM
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
Mounting Position: Any
MIN
1.27(32.3)
MIN
1.20(30.5)
A
Glass passivated chip junctions
POS.
LEAD
.032(.81)
.028(.71)
DIA
.220
.180
.220
.180
(5.6)
(4.6)
(5.6)
(4.6)
inch(mm)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
W005M W01M W02M W04M W06M W08M W10M UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard
Output current
@T
A
=25
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.5
600
420
600
800
560
800
1000
700
1000
V
V
V
A
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
Maximum instantaneous forw ard voltage
at 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
I
FSM
50.0
A
V
F
I
R
T
J
T
STG
1.0
10.0
1.0
- 55 ---- + 125
- 55 ---- + 150
V
μA
mA
Operating junction temperature range
Storage temperature range
www.galaxycn.com
Document Number 0287014
BL
GALAXY ELECTRICAL
1.

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