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ATF-46101

Description
RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 0.100 INCH, HERMETIC SEALED, MEATL CERAMIC, FM-2
CategoryDiscrete semiconductor    The transistor   
File Size95KB,3 Pages
ManufacturerHewlett Packard Co.
Download Datasheet Parametric View All

ATF-46101 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 0.100 INCH, HERMETIC SEALED, MEATL CERAMIC, FM-2

ATF-46101 Parametric

Parameter NameAttribute value
package instructionFLANGE MOUNT, R-CDFM-F2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage14 V
Maximum drain current (ID)0.45 A
FET technologyMETAL SEMICONDUCTOR
highest frequency bandX BAND
JESD-30 codeR-CDFM-F2
Number of components1
Number of terminals2
Operating modeDEPLETION MODE
Maximum operating temperature175 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment2 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsGALLIUM ARSENIDE
Base Number Matches1
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