TYPICAL PERFORMANCE CURVES
®
1200V
APT13GP120B_S(G)
APT13GP120B
APT13GP120S
APT13GP120BG* APT13GP120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
®
B
TO
-2
47
D
3
PAK
The POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs. Using Punch
Through Technology this IGBT is ideal for many high frequency, high voltage switching
applications and has been optimized for high frequency switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
• 100 kHz operation @ 600V, 10A
• 50 kHz operation @ 600V, 16A
• RBSOA Rated
C
G
E
S
G
C
E
C
G
E
MAXIMUM RATINGS
Symbol
V
CES
V
GE
I
C1
I
C2
I
CM
RBSOA
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 110°C
Pulsed Collector Current
1
All Ratings: T
C
= 25°C unless otherwise specified.
APT13GP120B_S(G)
UNIT
Volts
1200
±30
41
20
50
50A @ 960V
250
-55 to 150
300
Amps
Reverse Bias Safe Operating Area @ T
J
= 150°C
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts
°C
STATIC ELECTRICAL CHARACTERISTICS
Symbol
V
(BR)CES
V
GE(TH)
V
CE(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 500µA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 1mA, T
j
= 25°C)
MIN
TYP
MAX
Units
1200
3
4.5
3.3
3.0
500
2
2
6
3.9
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= 13A, T
j
= 125°C)
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 25°C)
Volts
I
CES
I
GES
Gate-Emitter Leakage Current (V
GE
= ±20V)
±100
nA
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7412
APT Website - http://www.advancedpower.com
Rev E
1-2006
Collector Cut-off Current (V
CE
= 1200V, V
GE
= 0V, T
j
= 125°C)
µA
3000
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
V
GEP
Q
g
Q
ge
Q
gc
RBSOA
t
d(on)
t
d(off)
t
f
E
on1
E
on2
t
d(on)
t
r
t
d(off)
t
f
E
on1
E
on2
E
off
E
off
t
r
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
3
APT13GP120B_S(G)
Test Conditions
Capacitance
V
GE
= 0V, V
CE
= 25V
f = 1 MHz
Gate Charge
V
CE
= 600V
I
C
= 13A
T
J
= 150°C, R
G
= 5Ω, V
GE
=
V
GE
= 15V
MIN
TYP
MAX
UNIT
pF
V
nC
1145
90
15
7.5
55
8
26
50
9
12
28
34
115
330
165
9
12
70
200
225
710
840
µ
J
ns
ns
A
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Reverse Bias Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
4
4
55
4
5
15V, L = 100µH,V
CE
= 960V
Inductive Switching (25°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 13A
R
G
= 5Ω
Turn-on Switching Energy (Diode)
6
T
J
= +25°C
Inductive Switching (125°C)
V
CC
= 600V
V
GE
= 15V
I
C
= 13A
R
G
= 5Ω
µ
J
Turn-on Switching Energy (Diode)
6
T
J
= +125°C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θ
JC
R
θ
JC
W
T
Characteristic
Junction to Case
(IGBT)
Junction to Case
(DIODE)
Package Weight
MIN
TYP
MAX
UNIT
°C/W
gm
.50
N/A
5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
ces
includes both IGBT and FRED leakages
3 See MIL-STD-750 Method 3471.
4 E
on1
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
1-2006
Rev E
5 E
on2
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
loss. (See Figures 21, 22.)
6 E
off
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7412
TYPICAL PERFORMANCE CURVES
40
35
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
40
35
30
25
20
15
10
5
0
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
APT13GP120B_S(G)
30
25
20
15
10
5
0
T
J
= 125°C
T
J
= 25°C
T
J
= -55°C
40
I
C
, COLLECTOR CURRENT (A)
FIGURE 1, Output Characteristics(T
J
= 25°C)
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
250µs PULSE
TEST<0.5 % DUTY
CYCLE
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
16
14
12
10
FIGURE 2, Output Characteristics (T
J
= 125°C)
I = 13A
C
T = 25°C
J
0
1
2
3
4
5
6
V
CE
, COLLECTER-TO-EMITTER VOLTAGE (V)
35
30
25
20
15
10
5
0
V
CE
= 240V
V
CE
= 600V
8
6
4
2
0
0
10
20
30
40
GATE CHARGE (nC)
FIGURE 4, Gate Charge
50
60
T
J
= -55°C
T
J
= 25°C
T
J
= 125°C
V
CE
= 960V
0
2
3
4
5
6
7
8
9
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 3, Transfer Characteristics
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
1
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (V)
6
5
4
3
2
1
0
T
J
= 25°C.
250µs PULSE TEST
<0.5 % DUTY CYCLE
5
I
C
= 26A
I
C
= 13A
I
C
= 26A
I
C
= 13A
4
3
I
C
= 6.5A
I
C
= 6.5A
2
1
V
GE
= 15V.
250µs PULSE TEST
<0.5 % DUTY CYCLE
8
10
12
14
16
V
GE
, GATE-TO-EMITTER VOLTAGE (V)
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
6
-25
0
25
50
75 100 125
T
J
, Junction Temperature (°C)
FIGURE 6, On State Voltage vs Junction Temperature
0
-55
BV
CES
, COLLECTOR-TO-EMITTER BREAKDOWN
VOLTAGE (NORMALIZED)
60
I
C,
DC COLLECTOR CURRENT(A)
50
40
30
20
10
0
-50
1.05
1.00
0.95
050-7412
-25
0
25
50
75
100 125
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90
-50
-25
0
25 50 75 100 125 150
T
C
, CASE TEMPERATURE (°C)
FIGURE 8, DC Collector Current vs Case Temperature
Rev E
1-2006
12
10
100
t
d (OFF)
, TURN-OFF DELAY TIME (ns)
APT13GP120B_S(G)
t
d(ON)
, TURN-ON DELAY TIME (ns)
90
80
70
60
50
40
30
20
V
CE
=
600V
10
R
G
=
5Ω
V
GE
=15V,T
J
=25°C
V
GE
=15V,T
J
=125°C
V
GE
= 15V
8
6
4
2
T = 25°C
or
125°C
J
V
CE
= 600V
R
G
= 5Ω
L = 100 µH
30
25
20
15
10
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9, Turn-On Delay Time vs Collector Current
30
25
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
600V
0
30
25
20
15
10
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
250
t
f,
FALL TIME (ns)
R
G
=
5Ω, L
=
100
µ
H, V
CE
=
600V
0
L = 100 µH
t
r,
RISE TIME (ns)
20
15
10
5
0
200
T
J
=
125°C, V
GE
=
15V
150
100
T
J
=
25°C, V
GE
=
15V
T
J
=
25 or 125°C,V
GE
=
15V
50
0
30
25
20
15
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11, Current Rise Time vs Collector Current
5
1400
30
25
20
15
10
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 12, Current Fall Time vs Collector Current
1600
E
OFF
, TURN OFF ENERGY LOSS (µJ)
= 600V
V
CE
= +15V
V
GE
R = 5Ω
G
E
ON2
, TURN ON ENERGY LOSS (µJ)
1200
1000
800
600
400
200
0
V
= 600V
CE
V
= +15V
GE
R = 5Ω
G
1400
1200
1000
800
600
400
200
0
T
J
=
125°C
T
J
=
125°C
T
J
=
25°C
T
J
=
25°C
30
25
20
15
10
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 13, Turn-On Energy Loss vs Collector Current
5
1800
30
25
20
15
10
5
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
SWITCHING ENERGY LOSSES (µJ)
= 600V
V
CE
= +15V
V
GE
R = 5Ω
G
SWITCHING ENERGY LOSSES (µJ)
1600
1400
1200
1000
800
600
400
200
0
E
off,
26A
E
on2,
26A
1400
1200
1000
800
600
400
200
E
on2,
26A
E
off,
13A
E
off,
26A
E
on2,
13A
E
on2,
6.5A
E
off,
6.5A
E
off,
13A
E
on2,
13A
E
off,
6.5A
= 600V
V
CE
= +15V
V
GE
T = 125°C
J
1-2006
Rev E
E
on2,
6.5A
050-7412
50
40
30
20
10
R
G
, GATE RESISTANCE (OHMS)
FIGURE 15, Switching Energy Losses vs. Gate Resistance
0
125
100
75
50
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 16, Switching Energy Losses vs Junction Temperature
0
25
TYPICAL PERFORMANCE CURVES
3,000
1,000
500
C, CAPACITANCE ( F)
P
60
C
ies
I
C
, COLLECTOR CURRENT (A)
50
40
30
20
10
APT13GP120B_S(G)
100
50
C
oes
10
C
res
0
10
20
30
40
50
V
CE
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
1
0
200
400
600
800
1000
V
CE
, COLLECTOR TO EMITTER VOLTAGE
Figure 18,Minimim Switching Safe Operating Area
0
0.60
0.50
0.40
0.30
0.20
0.10
0
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.9
0.7
0.5
0.3
0.1
0.05
10
-5
10
-4
Note:
PDM
t1
t2
SINGLE PULSE
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-3
10
-2
10
-1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
181
F
MAX
, OPERATING FREQUENCY (kHz)
100
RC MODEL
Junction
temp. (°C)
0.216
Power
(watts)
0.284
Case temperature. (°C)
0.161F
0.006F
50
= min (f
max
, f
max2
)
0.05
f
max1
=
t
d(on)
+ t
r
+ t
d(off)
+ t
f
max
T = 125
°
C
J
T = 75
°
C
C
D = 50 %
V
= XXXV
CE
R = 5Ω
G
F
f
max2
=
P
diss
=
P
diss
- P
cond
E
on2
+ E
off
T
J
- T
C
R
θJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10
15
20
25
30
I
C
, COLLECTOR CURRENT (A)
Figure 20, Operating Frequency vs Collector Current
10
5
050-7412
Rev E
1-2006
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