APTM20UM04S-AlN
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
V
DSS
= 200V
R
DSon
= 4mΩ max @ Tj = 25°C
I
D
= 417A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Uninterruptible Power Supplies
•
Motor control
Features
•
Power MOS 7
®
MOSFETs
- Low R
DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
- Symmetrical design
- M5 power connectors
•
High level of integration
•
AlN substrate for improved thermal performance
S
Q1
G
S
D
SK
G
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Low profile
Absolute maximum ratings
Symbol
V
DSS
I
D
I
DM
V
GS
R
DSon
P
D
I
AR
E
AR
E
AS
Parameter
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
T
c
= 25°C
T
c
= 80°C
T
c
= 25°C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM20UM04S– -AlN Rev 0
Max ratings
200
417
310
1670
±30
4
1560
100
50
3000
Unit
V
A
V
mΩ
W
A
mJ
July, 2004
APTM20UM04S-AlN
Symbol
BV
DSS
I
DSS
R
DS(on)
V
GS(th)
I
GSS
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Characteristic
Drain - Source Breakdown Voltage
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
V
GS
= 0V, I
D
= 500µA
Min
200
T
j
= 25°C
V
GS
= 0V,V
DS
= 160V
T
j
= 125°C
V
GS
= 10V, I
D
= 208.5A
V
GS
= V
DS
, I
D
= 10mA
V
GS
= ±30 V, V
DS
= 0V
V
GS
= 0V,V
DS
= 200V
Typ
Max
500
2000
4
5
±200
Unit
V
µA
mΩ
V
nA
3
Dynamic Characteristics
Symbol
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
E
on
E
off
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Gate – Source Charge
Gate – Drain Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Turn-on Switching Energy
Turn-off Switching Energy
Test Conditions
V
GS
= 0V
V
DS
= 25V
f = 1MHz
V
GS
= 10V
V
Bus
= 100V
I
D
= 417A
Inductive switching @ 125°C
V
GS
= 15V
V
Bus
= 133V
I
D
= 417A
R
G
= 1.2Ω
Inductive switching @ 25°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 417A, R
G
= 1.2Ω
Inductive switching @ 125°C
V
GS
= 15V, V
Bus
= 133V
I
D
= 417A, R
G
= 1.2Ω
Min
Typ
28.8
9.32
0.58
560
212
268
32
64
88
116
3396
3716
3744
3944
Max
Unit
nF
nC
ns
µJ
µJ
E
on
includes diode reverse recovery.
In accordance with JEDEC standard JESD24-1.
Series diode ratings and characteristics
Symbol Characteristic
I
F(A V)
Maximum Average Forward Current
V
F
Diode Forward Voltage
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
T
j
= 125°C
1500
nC
APT website – http://www.advancedpower.com
2–6
APTM20UM04S– -AlN Rev 0
Test Conditions
50% duty cycle
I
F
= 360A
I
F
= 720A
I
F
= 360A
I
F
= 360A
V
R
= 133V
di/dt = 1000A/µs
I
F
= 360A
V
R
= 133V
di/dt = 1000A/µs
Min
T
c
= 85°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
Typ
360
1.1
1.4
0.9
31
60
360
Max
1.15
Unit
A
V
July, 2004
ns
APTM20UM04S-AlN
Parallel diode ratings and characteristics
Symbol Characteristic
I
F(A V)
Maximum Average Forward Current
V
F
Diode Forward Voltage
Test Conditions
50% duty cycle
I
F
= 360A
I
F
= 720A
I
F
= 360A
I
F
= 360A
V
R
= 133V
di/dt = 1000A/µs
I
F
= 360A
V
R
= 133V
di/dt = 1000A/µs
Min
T
c
= 85°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Typ
360
1.1
1.4
0.9
31
60
360
1500
Max
1.15
Unit
A
V
t
rr
Q
rr
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case
Transistor
Series Diode
Parallel Diode
Min
Typ
Max
0.08
0.12
0.12
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
RMS Isolation Voltage, any terminal to case t =1 min, Isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Package outline
APT website – http://www.advancedpower.com
3–6
APTM20UM04S– -AlN Rev 0
July, 2004
APTM20UM04S-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.09
Thermal Impedance (°C/W)
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0.7
0.5
0.3
0.1
Single Pulse
0.9
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
V
GS
=15V
1400
1200
I
D
, Drain Current (A)
1000
800
600
400
200
0
Transfert Characteristics
1200
I
D
, Drain Current (A)
1000
800
600
400
200
0
T
J
=25°C
T
J
=125°C
T
J
=-55°C
V
DS
> I
D
(on)xR
DS
(on)MAX
250µs pulse test @ < 0.5 duty cycle
10V
9V
8.5V
8V
7.5V
7V
6.5V
0
4
8
12
16
20
24
28
0
V
DS
, Drain to Source Voltage (V)
R
DS(on)
vs Drain Current
1.2
I
D
, DC Drain Current (A)
Normalized to
V
GS
=10V @ 208.5A
1 2 3 4 5 6 7 8 9 10
V
GS
, Gate to Source Voltage (V)
R
DS(on)
Drain to Source ON Resistance
DC Drain Current vs Case Temperature
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
July, 2004
4–6
APTM20UM04S– -AlN Rev 0
1.1
1
V
GS
=10V
V
GS
=20V
0.9
0.8
0
100
200
300
400
500
600
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
APT website – http://www.advancedpower.com
APTM20UM04S-AlN
RDS(on), Drain to Source ON resistance
(Normalized)
Breakdown Voltage vs Temperature
BV
DSS
, Drain to Source Breakdown
Voltage (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
-50 -25
0
25 50 75 100 125 150
T
J
, Junction Temperature (°C)
Threshold Voltage vs Temperature
1.2
V
GS
(TH), Threshold Voltage
(Normalized)
I
D
, Drain Current (A)
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25
0
25 50 75 100 125 150
T
C
, Case Temperature (°C)
Capacitance vs Drain to Source Voltage
100000
Ciss
C, Capacitance (pF)
10000
Coss
ON resistance vs Temperature
2.5
2.0
1.5
1.0
0.5
0.0
-50 -25
0
25
50
75 100 125 150
T
J
, Junction Temperature (°C)
Maximum Safe Operating Area
10000
V
GS
=10V
I
D
= 208.5A
1000
limited by
R
DSon
100µs
1ms
10ms
100ms
100
10
Single pulse
T
J
=150°C
1
1
10
100
1000
V
DS
, Drain to Source Voltage (V)
V
GS
, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
14
I
D
=417A
V
DS
=40V
12
T
J
=25°C
10
8
6
4
2
0
0
80 160 240 320 400 480 560 640
Gate Charge (nC)
July, 2004
V
DS
=100V
V
DS
=160V
1000
Crss
100
0
10
20
30
40
50
V
DS
, Drain to Source Voltage (V)
APT website – http://www.advancedpower.com
5–6
APTM20UM04S– -AlN Rev 0
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