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BAS70WS

Description
0.2 A, 70 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size145KB,2 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BAS70WS Overview

0.2 A, 70 V, SILICON, SIGNAL DIODE

BL
Galaxy Electrical
Schottky barrier diodes
FEATURES
Low turn-on voltage.
Fast switching.
Production specification
BAS70WS
Pb
Lead-free
PN junction guard for transient and ESD protection.
APPLICATIONS
SOD-323
Surface mount fast switching diode
ORDERING INFORMATION
Type No.
BAS70WS
Marking
K73
Package Code
SOD-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Characteristic
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Reverse Voltage
RMS reverse voltage
Forward Continuous Current
Peak forward surge current@<1.0s
Power Dissipation
Thermal Resistance Junction to Ambient
Junction and Storage Temperature Rage
Symbol
V
RRM
V
RWM
V
R
V
R
RMS
I
F
I
FSM
P
d
R
θ
JA
T
j
,T
STG
Value
70
Unit
V
49
70
100
200
625
-65 to+150
V
mA
mA
mW
℃/W
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Capacitance between terminals
Reverse Recovery Time
Symbol
V
(BR)R
V
F
I
R
C
T
t
rr
Min
70
-
-
-
-
Max
-
410
1000
100
2
5
Unit
V
mV
nA
pF
ns
Test Condition
I
R
=10μA
I
F
=1.0mA
I
F
=15mA
V
R
=50V
V
R
=0,f=1.0MHz
I
F
=I
R
=10mA,
R
L
=100Ω
Document number: BL/SSSKB012
Rev.A
www.galaxycn.com
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