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BAT42W

Description
0.2 A, 30 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size154KB,3 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BAT42W Overview

0.2 A, 30 V, SILICON, SIGNAL DIODE

BAT42W Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionROHS COMPLIANT, PLASTIC PACKAGE-2
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum repetitive peak reverse voltage30 V
Maximum average forward current0.2000 A
BL
Galaxy Electrical
Schottky Barrier Diode
FEATURES
Low forward voltage.
Lead-free
Fast switching time.
Surface mount package ideally suited for automatic insertion.
Production specification
BAT42W-BAT43W
Pb
APPLICATIONS
Schottky barrier detector and switching diodes.
SOD-123
ORDERING INFORMATION
Type No.
BAT42W
BAT43W
Marking
S7
S8
Package Code
SOD-123
SOD-123
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
Working peak
DC Reverse Voltage
RMS Reverse Voltage
Forward continuous Current
Repetitive peak Forward Current
Forward Surge Current
Power Dissipation
Thermal resistance,junction to ambient
air
Junction temperature
Storage temperature range
Symbol
V
RM
V
RWM
V
R
V
R(RMS)
I
F
I
FRM
I
FSM
P
d
R
θjA
T
j
T
stg
21
200
500
4.0
200
500
125
-55-125
V
mA
mA
A
mW
℃/W
30
V
Limits
Unit
Document number: BL/SSSKA007
Rev.A
www.galaxycn.com
1

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