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BAT60B

Description
3 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size189KB,3 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BAT60B Overview

3 A, SILICON, RECTIFIER DIODE

BL
Galaxy
FEATURES
Electrical
Production specification
Schottky Barrier Diode
Low voltage,Low inductance.
High current rectifier schottky diode.
For power supply.
For detection and step-up-conversion.
BAT60B
Pb
Lead-free
APPLICATIONS
Schottky barrier detector.
SOD-323
ORDERING INFORMATION
Type No.
BAT60B
Marking
W5
Package Code
SOD-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Peak reverse voltage
DC Reverse Voltage
Average Rectified Output Current
Forward Surge Current
Total Power Dissipation
Junction temperature
Storage temperature range
Symbol
V
RM
V
R
I
O
I
FSM
P
tot
T
j
T
stg
Limits
10
10
3
5
1350
150
-55-150
Unit
V
V
A
A
mW
ELECTRICAL CHARACTERISTICS
@ Ta=25℃
Parameter
Symbol
Conditions
I
F
=10mA
Forward voltage
V
F
I
F
=100mA
I
F
=500mA
I
F
=1000mA
Reverse current
Capacitance between terminals
I
R
C
T
V
R
=5v
V
R
=8v
V
R
=5v,f=1MHz
unless otherwise specified
Min.
Typ.
Max.
0.3
0.38
0.5
0.6
15
25
30
Unit
V
V
V
V
μA
pF
Document number: BL/SSSKB016
Rev.A
www.galaxycn.com
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