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BAV99W

Description
0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size148KB,3 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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BAV99W Overview

0.15 A, 75 V, 2 ELEMENT, SILICON, SIGNAL DIODE

BAV99W Parametric

Parameter NameAttribute value
Number of terminals3
Number of components2
Processing package descriptionPLASTIC PACKAGE-3
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingNOT SPECIFIED
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structure系列 CONNECTED, CENTER TAP, 2 ELEMENTS
Diode component materialssilicon
Maximum power consumption limit0.2000 W
Diode typeSignal diode
Maximum reverse recovery time0.0060 us
Maximum repetitive peak reverse voltage75 V
Maximum average forward current0.1500 A
BL
Galaxy Electrical
Dual series switching diode
FEATURES
Fast switching speed.
High conductance
Connected in series
Surface mount package ideally suited
for automatic insertion
Production specification
BAV99W
Pb
Lead-free
APPLICATIONS
For general purpose switching appilication.
SOT-323
ORDERING INFORMATION
Type No.
BAV99W
Marking
KGJ
Package Code
SOT-323
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non repetitive peak reverse voltage
Repetitive peak reverse voltage
Working peak reverse voltage
DC Reverse voltage
Symbol
V
RM
V
RRM
V
RWM
V
R
1.0
2.0
300
150
200
-65-150
Value
100
Unit
V
75
V
Peak forward surge current @t=1.0s
@t=1.0μs
Forward continuous current
Average rectified output current
Power dissipation
Operating and storage temperature range
I
FSM
A
I
FM
I
O
P
d
T
j
,T
STG
mA
mA
mW
Document number: BL/SSSDF007
Rev.A
www.galaxycn.com
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Index Files: 1513  1558  1987  2427  2470  31  32  41  49  50 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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