BC856W datasheet, PDF - EEWORLD Datasheet

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BC856W: Description100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size129KB，3 Pages; ManufacturerBILIN; Websitehttp://www.galaxycn.com/

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BC856W Overview

100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR

BC856W Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum collector current	0.1000 A
Maximum Collector-Emitter Voltage	45 V
Processing package description	USM, 3 PIN
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum ambient power consumption	0.1000 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	125
Rated crossover frequency	150 MHz

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Galaxy Electrical

Production specification

PNP Silicon Epitaxial Planar Transistor

BC856W/BC857W/BC858W

FEATURES

Ideally suited for automatic insertion.

Power dissipation.(P

=200mW)

Lead-free

APPLICATIONS

General purpose switching and amplification application.

ORDERING INFORMATION

Type No.

BC856W

BC857W

BC858W

Marking

3As/3Bs

3E/3F/3G

3J/3K/3L

SOT-323

Package Code

SOT-323

MAXIMUM RATING

@ Ta=25℃ unless otherwise specified

Symbol

CBO

Collector-Emitter Voltage

CEO

EBO

stg

Emitter-Base Voltage

Collector Current -Continuous

Collector Dissipation

Junction and Storage Temperature

Parameter

Collector-Base Voltage

BC856W

BC857W

BC858W

BC856W

BC857W

BC858W

Value

-80

-50

-30

-65

-45

-30

-5

-100

200

-65~150

Units

℃

ELECTRICAL CHARACTERISTICS

@ Ta=25℃ unless otherwise specified

Document number: BL/SSSTF046

Rev.A

www.galaxycn.com

BC856W Related Products

	BC856W	BC857W	BC858W
Description	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR	100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR
Number of terminals	3	3	3
Transistor polarity	PNP	PNP	PNP
Maximum collector current	0.1000 A	0.1000 A	0.1000 A
Maximum Collector-Emitter Voltage	45 V	45 V	45 V
Processing package description	USM, 3 PIN	USM, 3 PIN	USM, 3 PIN
state	ACTIVE	ACTIVE	ACTIVE
packaging shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package Size	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
surface mount	Yes	Yes	Yes
Terminal form	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL
Packaging Materials	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
structure	SINGLE	SINGLE	SINGLE
Number of components	1	1	1
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
Maximum ambient power consumption	0.1000 W	0.1000 W	0.1000 W
Transistor type	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL	GENERAL PURPOSE SMALL SIGNAL
Minimum DC amplification factor	125	125	125
Rated crossover frequency	150 MHz	150 MHz	150 MHz

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