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MMBD2835

Description
0.1 A, 35 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size148KB,3 Pages
ManufacturerBILIN
Websitehttp://www.galaxycn.com/
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MMBD2835 Overview

0.1 A, 35 V, SILICON, SIGNAL DIODE

BL
Galaxy Electrical
Surface mount switching diode
FEATURES
High speed switching: t
rr
=4.0ns(max)
Low capacitance: C
T
=2.5pF(typ.)
Production specification
MMBD2835/MMBD2836
Pb
Lead-free
APPLICATIONS
Small signal switching
SOT-23
ORDERING INFORMATION
Type No.
MMBD2835
MMBD2836
Marking
A3●
A41
Package Code
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Parameter
Non-Repetitive Peak reverse voltage
DC Reverse Voltage
Average rectified output Current
Power Dissipation
Junction temperature
Storage temperature
Symbol
Limits
1S2835
V
RM
V
R
I
o
P
d
T
J
T
STG
35
30
100
150
125
-55-125
1S2836
75
50
V
V
mA
mW
Unit
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Symbol
V
F1
Forward voltage
V
F2
V
F3
Reverse current
Capacitance between
terminals
Reverse Recovery Time
I
R
I
R
C
T
t
rr
2.5
Min.
Typ.
0.72
0.88
1.0
Max.
1.0
1.1
1.2
0.1
0.1
4
4
Unit
V
V
V
μA
μA
pF
ns
Conditions
I
R
=10mA
I
R
=50mA
I
F
=100mA
V
R
=30V
V
R
=50V
1S2835
1S2836
V
R
=0,f=1MHz
I
F
=10mA,V
R
=6VI
rr
=0.1*I
R,
R
L
=100Ω
www.galaxycn.com
1
Document number: BL/SSSDC066
Rev.A

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Description 0.1 A, 35 V, SILICON, SIGNAL DIODE 0.1 A, 75 V, SILICON, SIGNAL DIODE
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