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BF245CRLRM

Description
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size252KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

BF245CRLRM Overview

UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN

BF245CRLRM Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Manufacturer packaging codeCASE 29-11
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)0.1 A
FET technologyJUNCTION
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)225
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
ON Semiconductort
JFET VHF/UHF Amplifiers
N–Channel — Depletion
BF245A
BF245B
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Drain–Gate Voltage
Gate–Source Voltage
Drain Current
Forward Gate Current
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Storage Channel Temperature Range
3 DRAIN
Symbol
V
DS
V
DG
V
GS
I
D
I
G(f)
P
D
T
stg
Value
±30
30
30
100
10
350
2.8
–65 to +150
3 DRAIN
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
mW
mW/°C
°C
1
2
3
BF244A, BF244B
CASE 29–11, STYLE 22
TO–92 (TO–226AA)
1
2
3
2
GATE
STYLE 22
1
GATE
STYLE 23
BF245, BF245A,
BF245B, BF245C
CASE 29–11, STYLE 23
TO–92 (TO–226AA)
2 SOURCE
1 SOURCE
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(I
G
= 1.0
µAdc,
V
DS
= 0)
Gate–Source
(V
DS
= 15 Vdc, I
D
= 200
µAdc)
BF245
(1)
BF245A,
BF245B,
BF245C
V
(BR)GSS
V
GS
BF244A
(2)
BF244B
V
GS(off)
I
GSS
0.4
0.4
1.6
3.2
–0.5
7.5
2.2
3.8
7.5
–8.0
5.0
Vdc
nAdc
30
Vdc
Vdc
Gate–Source Cutoff Voltage
(V
DS
= 15 Vdc, I
D
= 10 nAdc)
Gate Reverse Current
(V
GS
= 20 Vdc, V
DS
= 0)
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(V
DS
= 15 Vdc, V
GS
= 0)
BF245
(1)
BF245A,
BF245B,
BF245C
BF244A
(2)
BF244B
I
DSS
2.0
2.0
6.0
12
25
6.5
15
25
mAdc
1. On orders against the BF245, any or all subgroups might be shipped.
2. On orders against the BF244A, any or all subgroups might be shipped.
©
Semiconductor Components Industries, LLC, 2001
332
June, 2001 – Rev. 0
Publication Order Number:
BF245A/D
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