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BYG21KHM3/TR

Description
DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size85KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

BYG21KHM3/TR Overview

DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode

BYG21KHM3/TR Parametric

Parameter NameAttribute value
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Base Number Matches1
BYG21K-M3/HM3, BYG21M-M3/HM3
www.vishay.com
Vishay General Semiconductor
Fast Avalanche SMD Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated junction
• Low reverse current
• Soft recovery characteristic
• Fast reverse recovery time
DO-214AC (SMA)
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
t
rr
E
R
T
J
max.
Package
Diode variation
1.5 A
800 V, 1000 V
30 A
1.0 μA
1.6 V
120 ns
20 mJ
150 °C
DO-214AC (SMA)
Single die
TYPICAL APPLICATIONS
For use in fast switching rectification of power supply,
inverters, converters, and freewheeling diodes for
consumer, automotive, and telecommunication.
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
Color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Average forward current
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
Pulse energy in avalanche mode, non repetitive
(inductive load switch off) I
(BR)R
= 1 A, T
J
= 25 °C
Operating junction and storage temperature range
V
RRM
I
F(AV)
I
FSM
E
R
T
J
, T
STG
SYMBOL
BYG21K
BYG21K
800
1.5
30
20
-55 to +150
BYG21M
BYG21M
1000
V
A
A
mJ
°C
UNIT
Revision: 30-Oct-13
Document Number: 89476
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

BYG21KHM3/TR Related Products

BYG21KHM3/TR BYG21MHM3/TR3
Description DIODE 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode DIODE 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-214AC, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMA, 2 PIN, Rectifier Diode
package instruction R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Base Number Matches 1 1
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