Non-Volatile SRAM, 512KX8, 120ns, CMOS,
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Reach Compliance Code | unknown |
| Maximum access time | 120 ns |
| Other features | POWER SUPPLY WRITE PROTECTION |
| JESD-30 code | R-XDMA-T32 |
| JESD-609 code | e0 |
| memory density | 4194304 bit |
| Memory IC Type | NON-VOLATILE SRAM |
| memory width | 8 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 32 |
| word count | 524288 words |
| character code | 512000 |
| Operating mode | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 512KX8 |
| Output characteristics | 3-STATE |
| Exportable | YES |
| Package body material | UNSPECIFIED |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP32,.6 |
| Package shape | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| power supply | 5 V |
| Certification status | Not Qualified |
| Maximum standby current | 0.005 A |
| Maximum slew rate | 0.115 mA |
| Maximum supply voltage (Vsup) | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Base Number Matches | 1 |
| BQ4015YMB-120N | BQ4015MB-85 | BQ4015YMB-120 | BQ4015YMB-85 | BQ4015YMB-85N | BQ4015MB-120 | |
|---|---|---|---|---|---|---|
| Description | Non-Volatile SRAM, 512KX8, 120ns, CMOS, | Non-Volatile SRAM, 512KX8, 85ns, CMOS, | Non-Volatile SRAM, 512KX8, 120ns, CMOS, | Non-Volatile SRAM, 512KX8, 85ns, CMOS, | Non-Volatile SRAM, 512KX8, 85ns, CMOS, | Non-Volatile SRAM, 512KX8, 120ns, CMOS, |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown |
| Maximum access time | 120 ns | 85 ns | 120 ns | 85 ns | 85 ns | 120 ns |
| JESD-30 code | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 | R-XDMA-T32 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 | e0 |
| memory density | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| Memory IC Type | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM | NON-VOLATILE SRAM |
| memory width | 8 | 8 | 8 | 8 | 8 | 8 |
| Number of functions | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of ports | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 32 | 32 | 32 | 32 | 32 | 32 |
| word count | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| character code | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| Operating mode | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| Maximum operating temperature | 85 °C | 70 °C | 70 °C | 70 °C | 85 °C | 70 °C |
| organize | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Exportable | YES | YES | YES | YES | YES | YES |
| Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
| encapsulated code | DIP | DIP | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 | DIP32,.6 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
| Parallel/Serial | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| power supply | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum standby current | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A | 0.005 A |
| Maximum slew rate | 0.115 mA | 0.115 mA | 0.115 mA | 0.115 mA | 0.115 mA | 0.115 mA |
| Maximum supply voltage (Vsup) | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V | 5.5 V |
| Minimum supply voltage (Vsup) | 4.5 V | 4.75 V | 4.5 V | 4.5 V | 4.5 V | 4.75 V |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| Temperature level | INDUSTRIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | INDUSTRIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Other features | POWER SUPPLY WRITE PROTECTION | POWER SUPPLY WRITE PROTECTION | POWER SUPPLY WRITE PROTECTION | POWER SUPPLY WRITE PROTECTION | - | POWER SUPPLY WRITE PROTECTION |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | - |
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