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UPA508TE-A

Description
Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-95, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size145KB,8 Pages
ManufacturerNEC Electronics
Download Datasheet Parametric Compare View All

UPA508TE-A Overview

Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-95, 6 PIN

UPA508TE-A Parametric

Parameter NameAttribute value
Parts packaging codeSC-95
package instructionSMALL OUTLINE, R-PDSO-G5
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)2 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G5
JESD-609 codee6
Number of components1
Number of terminals5
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN BISMUTH
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
DATA SHEET
MOS FET WITH SCHOTTKY BARRIER DIODE
µ
PA508TE
N-CHANNEL MOS FET WITH SCHOTTKY BARRIER DIODE
FOR SWITCHING
DESCRIPTION
The
µ
PA508TE is a switching device, which can be driven
directly by a 2.5 V power source.
This device incorporates a MOS FET, which features a low
on-state resistance and excellent switching characteristics,
and a low forward voltage Schottky barrier diode, and is
suitable for applications such as DC/DC converter of
portable machine and so on.
PACKAGE DRAWING (Unit: mm)
0.32
+0.1
–0.05
0.16
+0.1
–0.06
0.65
–0.15
+0.1
2.8 ±0.2
5
4
1.5
0 to 0.1
1
2
3
FEATURES
2.5 V drive available (MOS FET)
Low on-state resistance (MOS FET)
R
DS(on)1
= 40 mΩ TYP. (V
GS
= 4.5 V, I
D
= 1.0 A)
R
DS(on)2
= 42 mΩ TYP. (V
GS
= 4.0 V, I
D
= 1.0 A)
R
DS(on)3
= 59 mΩ TYP. (V
GS
= 2.5 V, I
D
= 1.0 A)
Low forward voltage (Schottky barrier diode)
V
F
= 0.35 V TYP. (I
F
= 1.0 A)
1.9
2.9 ±0.2
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
SC-95_5p (Mini Mold Thin Type)
PIN CONNECTION (Top View)
5
4
1: Gate
2: Source
3: Anode
4: Cathode
5: Drain
µ
PA508TE
Marking: ZB
1
2
3
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
Caution This product is electrostatic-sensitive device due to low ESD capability and should be handled with
caution for electrostatic discharge.
V
ESD
±
150 V TYP. (C = 200 pF, R = 0
Ω,
Single pulse)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G16627EJ1V1DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
The mark
shows major revised points.
0.4
0.95
0.95
0.65
2003

UPA508TE-A Related Products

UPA508TE-A
Description Small Signal Field-Effect Transistor, 2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIMOLD, SC-95, 6 PIN
Parts packaging code SC-95
package instruction SMALL OUTLINE, R-PDSO-G5
Contacts 6
Reach Compliance Code unknown
ECCN code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V
Maximum drain current (ID) 2 A
Maximum drain-source on-resistance 0.09 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G5
JESD-609 code e6
Number of components 1
Number of terminals 5
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Certification status Not Qualified
surface mount YES
Terminal surface TIN BISMUTH
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications SWITCHING
Transistor component materials SILICON
Base Number Matches 1
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