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SB16100

Description
Rectifier Diode, Schottky, 1 Element, 16A, 100V V(RRM)
CategoryDiscrete semiconductor    diode   
File Size80KB,1 Pages
ManufacturerDiodes Incorporated
Download Datasheet Parametric View All

SB16100 Overview

Rectifier Diode, Schottky, 1 Element, 16A, 100V V(RRM)

SB16100 Parametric

Parameter NameAttribute value
Reach Compliance Codecompliant
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.765 V
Maximum non-repetitive peak forward current310 A
Number of components1
Maximum operating temperature125 °C
Maximum output current16 A
Maximum repetitive peak reverse voltage100 V
technologySCHOTTKY
Base Number Matches1
SB 16100
SCHOTTKY DIE SPECIFICATION
General Description: 100V 16 A ( Standard
□Low)
VF,
ELECTRICAL CHARACTERISTICS
SYM
DC Blocking Voltage:
Ir=1mA(for wafer form) VRRM
Ir=0.5mA (for dice form)
Average Rectified Forward Current
IFAV
Maximum Instantaneous Forward Voltage
@ 16 Ampere, Ta=25℃
VF MAX
Maximum Instantaneous Reverse Voltage
@ VR= 103 Volt, Ta=25℃
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
Operating Junction Temperature
Storage Temperature
TYPE: SB16100
( Single
□Dual)
Anode
Spec. Limit
100
16
0.795
0.765
Die Sort
107
UNIT
Volt
Amp
Volt
IR MAX
Cj MAX
IFSM
TJ
TSTG
0.350
0.300
mA
pF
310
125
-50 to +150
Amp
Specifications apply to die only. Actual performance may degrade when assembled.
We do not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DICE OUTLINE DRAWING
DIM
A
B
C
B
Top-side Metal
S
i
O
2
Passivation
A
ITEM
Die Size
Top Metal Pad Size
Thickness (Min)
Thickness (Max)
μm
3124
2986
203
254
Mil
122.99
117.56
8.00
10.00
PS:
(1)Cutting street width is around 50μm (1.96mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
P+ Guard Ring
Back-side Metal
C
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